Abstract:The Plateau-Rayleigh (P-R) crystal growth was recently proposed and dramatically extended the one-dimensional nanomaterials synthesis due to its tunable morphological features. Previously reported P-R growth is mainly focused on the relative low-temperature reactions (<1273 K, which is less than the melting point of reaction products or intermediate products), while high-temperature P-R growth with a molten state is rarely studied. To extend P-R growth to high temperature and reveal the underlying mechanism, herein we take the synthesis of SiC/SiO2 heterostructures as the prototype. With optimized growth temperature, we reported a novel high-temperature P-R growth of the beaded SiC/SiO2 nanochain heterostructures through a vapor-phase synthesis. The as-obtained SiC/SiO2 nanochain heterostructures involved the single-crystalline 3C-SiC core with diameters of similar to 20 nm, the amorphous SiO2 shell with thicknesses of 200-300 nm, and many uniform periodic amorphous SiO2 beads with diameters of 800-1000 nm. Further experiments and thermodynamics analysis reveal that the saturated vapor pressure and viscosity of the intermediate product SiO play a key role in this growth. This study not only provides a novel extension of P-R growth with the synthesis of SiC/SiO2 heterostructures but also reveals the significance of the saturated vapor pressure and viscosity of the intermediate product in the high-temperature P-R growth. It is expected that such findings will facilitate the applications of one-dimensional nanomaterials synthesis.

Chemical Vapor Growth of Silicon Phosphide Nanostructures

Synthesis of Monolayer SiP by Chemical Vapor Transport toward Superior Optoelectronic and Catalytic Performance

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Millimeter-scale Growth of Highly Ordered CsPbBr3 Single-Crystalline Microplatelets on SiO2/Si Substrate by Chemical Vapor Deposition

High-Temperature Plateau–Rayleigh Growth of Beaded SiC/SiO2 Nanochain Heterostructures

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Vapor–liquid–solid growth of highly stoichiometric gallium phosphide nanowires on silicon: restoration of chemical balance, congruent sublimation and maximization of band-edge emission

Strain-Less Directed Self-Assembly of Si Nanocrystals on Patterned Sio2 Substrate

Chemical Vapor Deposition: A Potential Tool for Wafer Scale Growth of Two-Dimensional Layered Materials

Self‐Assembled Si Quantum‐Ring Structures on a Si Substrate by Plasma‐Enhanced Chemical Vapor Deposition Based on a Growth‐Etching Competition Mechanism

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Syntheses and Growth Mechanisms of 3C-Sic Nanostructures from Carbon and Silicon Powders.

Thermal evaporation and solution strategies to novel nanoarchitectures of silicon carbide

Two-dimensional SiP: an unexplored direct band-gap semiconductor

Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding

Synthesis of Silicon Carbide Nanowires by Solid Phase Source Chemical Vapor Deposition

Mass Transport Determined Silica Nanowires Growth on Spherical Photonic Crystals with Nanostructure-Enabled Functionalities

Particle-Catalyst-Free Vapor-Liquid-Solid Growth of Millimeter-Scale Crystalline Compound Semiconductors on Nonepitaxial Substrates

Direct growth of monolayer MoS 2 on nanostructured silicon waveguides

Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires