Abstract:The heteroepitaxial growth of strained islands on a planar substrate offers an attractive route to the fabrication of quantum dots (QDs). To obtain more functions and superior properties, recent efforts have focused on using nanowires (NWs) as substrates to produce attractive structures that combine QDs with NWs. As the lateral size of an NW is large, it is possible that islands are formed on the side walls of the NW. However, no islands exist, and the lateral surface is rather smooth in thin, core-shell NWs. The existing theoretical models on the growth on planar and patterned substrates are not appropriate for the growth transition on the surface with nanoscale curvature. We thus urgently need to understand the basic physics involved in the strain-induced growth on the surface with nanoscale curvature. Here, we established a theoretical model to study the strain-induced growth on the surface, which showed that the Stranski-Krastanov (SK) mode can change to the Frank-van der Merwe (FM) mode due to the limit of the surface to the island's lateral growth. Using the model to investigate the heterostructured core/shell nanowires (NWs), we found, in addition to the SK mode on thick NWs and the FM mode on thin NWs, that there is a multiplex mode on medium NWs which includes the initial layer growth, the intermediate islands' growth and the final layer growth again. The established theoretical model not only explained some puzzling experimental results but also provided useful information to design and control the epitaxial growth on the surface with nanoscale curvature.

Strain-Less Directed Self-Assembly of Si Nanocrystals on Patterned Sio2 Substrate

Ultrafast growth of single-crystalline Si nanowires

The Constrained Growth and Patterned Distribution of Nc-Si from A-Sinx/a-si:H/a-sinx: Mechanism and Experiments

Coalescence of Planar GaAs Nanowires into Strain-Free Three-Dimensional Crystals on Exact (001) Silicon

Dynamics of Self-Organized Epitaxial Island Formation under Controlled Annealing

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Modification of Stranski–Krastanov Growth on the Surface of Nanowires

Formation of two- Or three-dimentional patterned structures of silicon nanocrystals

Strain-Mediated Patterning of Surface Nanostructure by the Subsurface Island Array

Silicon-induced Strain Relaxation and Enhanced Gallium Surfactant Effects on Gallium Nitride Island Shaping

Controllable Growth of Laterally Aligned Zinc Oxide Nanorod Arrays on A Selected Surface of the Silicon Substrate by A Catalyst-Free Vapor Solid Process - A Technique for Growing Nanocircuits

Crystalline Structures and Misfit Strain Inside Er Silicide Nanocrystals Self-Assembled on Si(001) Substrates

Nanostructure Self-Organization by Controlling Surface and Interface Strain

General Wet Route for the Growth of Regular Anisotropic Nanostructures on Silicon Substrate

Surface-migration Driving Uniform Amorphous Shell on Crystalline Nanowire: the Case of SiC/SiOx Core–shell Nanowires

Self-Oriented Single Crystalline Silicon Nanorod Arrays Through A Chemical Vapor Reaction Route

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Mass Transport Determined Silica Nanowires Growth on Spherical Photonic Crystals with Nanostructure-Enabled Functionalities

Formation of the Patterned Nanocrystalline Si by Pulsed-Laser Interference Crystallization of A-Si:H Thin Films

In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates.

Effect of Multiple Depositions and Annealing Treatments on the Erbium Silicide Nanoislands Self-Assembled on Si(OOl) Substrates