Abstract:Substrates with controlled surface morphologies are used to quantify the kinetics of surface mass transport during Stranski-Krastanov growth of epitaxial nanostructures. Morphologies are modified by laser texturing; tightly focused nanosecond laser pulses are used to produce micron-scale dimples on the surface of Si(001) substrates. The areal densities of three-dimensional Ge islands formed by chemical vapor deposition on these modified substrates is measured by atomic force microscopy for a wide range of Ge coverages (3-10 ML), temperatures (500<T<700 degreesC), and deposition rates (0.003<F<0.3 ML s(-1)). Island nucleation is enhanced at the vicinal surfaces surrounding the rim of the laser dimples, and, as a consequence, a denuded zone with a reduced island density surrounds each dimple. The width of the denuded zone can be as large as 50 times the island spacing and is created by extensive mass transport during the formation of the wetting layer. Mass transport is driven by chemical-potential gradients associated with the wetting-layer thickness, substrate vicinality, and the elastic relaxation of three-dimensional islands. We find excellent agreement between the data and a one-dimensional model calculation of diffusion and nucleation; the fit to the model gives a transport rate of Dn(0)approximate to1.5x10(5) s(-1) at 600 degreesC and an activation energy E-f+E(m)approximate to1.3 eV.

Effect of Multiple Depositions and Annealing Treatments on the Erbium Silicide Nanoislands Self-Assembled on Si(OOl) Substrates

From Nanowires To Nanoislands: Morphological Evolutions Of Erbium Silicide Nanostructures Formed On The Vicinal Si(001) Surface

Thermal Stability and Growth Behavior of Erbium Silicide Nanowires Self-Assembled on a Vicinal Si(OOl) Surface

Erbium Silicide Nanostructures Self-Assembled on Si(001) by Cyclic Growth

Growth of Erbium Silicide Nanowires on Si(001) Surface Studied by Scanning Tunneling Microscopy

X-ray Study of Strain and Composition of Si∕Ge0.85Si0.15(111) Islands Grown in Volmer-Weber Mode

Silicon-induced Strain Relaxation and Enhanced Gallium Surfactant Effects on Gallium Nitride Island Shaping

The Influence of Cyclic Deposition and Anneal on Growth of Isolated and Well-Dispersed Au Nanoisland Arrays

Crystalline Structures and Misfit Strain Inside Er Silicide Nanocrystals Self-Assembled on Si(001) Substrates

Strain-Less Directed Self-Assembly of Si Nanocrystals on Patterned Sio2 Substrate

Strain Evolution In Coherent Ge/Si Islands

Effect of Growth Rate on the Spatial Distributions of Dome-Shaped Ge Islands on Si(001)

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Surface Mass Transport and Island Nucleation During Growth of Ge on Laser Textured Si(001)

Preparation and Characterization of C54 TiSi2 Nanoislands on Si (1 1 1) by Laser Deposition of TiO2

Dynamics of Self-Organized Epitaxial Island Formation under Controlled Annealing

Self-organization of CrSi2 nanoislands on Si(111) and growth of monocrystalline silicon with buried multilayers of CrSi2 nanocrystallites

Influence of Si Concentration on the Evolution of Shape and Size of Self-Assembled Ge Islands

Annealing Effects on the Microstructure of Ge/Si(001) Quantum Dots

Electronic Structures of Gesi Nanoislands Grown on Pit-Patterned Si(001) Substrate

Erbium Induced Reconstructions On Silicon (100) Substrate