Abstract:With their shielded 4f orbitals, rare-earth ions (REIs) offer optical and electron spin transitions with good coherence properties even when embedded in a host crystal matrix, highlighting their utility as promising quantum emitters and memories for quantum information processing. Among REIs, trivalent erbium (Er$^{3+}$) uniquely has an optical transition in the telecom C-band, ideal for transmission over optical fibers, and making it well-suited for applications in quantum communication. The deployment of Er$^{3+}$ emitters into a thin film TiO$_2$ platform has been a promising step towards scalable integration; however, like many solid-state systems, the deterministic spatial placement of quantum emitters remains an open challenge. We investigate laser annealing as a means to locally tune the optical resonance of Er$^{3+}$ emitters in TiO$_2$ thin films on Si. Using both nanoscale X-ray diffraction measurements and cryogenic photoluminescence spectroscopy, we show that tightly focused below-gap laser annealing can induce anatase to rutile phase transitions in a nearly diffraction-limited area of the films and improve local crystallinity through grain growth. As a percentage of the Er:TiO$_2$ is converted to rutile, the Er$^{3+}$ optical transition blueshifts by 13 nm. We explore the effects of changing laser annealing time and show that the amount of optically active Er:rutile increases linearly with laser power. We additionally demonstrate local phase conversion on microfabricated Si structures, which holds significance for quantum photonics.

Erbium Induced Reconstructions On Silicon (100) Substrate

Surface structures of erbium silicide ultra-thin films formed by solid phase epitaxy on Si(100)

From Nanowires To Nanoislands: Morphological Evolutions Of Erbium Silicide Nanostructures Formed On The Vicinal Si(001) Surface

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Photoemission Study of the Initial Stage of Er/Si(100) Interface Formation

Growth of Erbium Silicide Nanowires on Si(001) Surface Studied by Scanning Tunneling Microscopy

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

Influence of Growth Parameters on the Microstructures of Erbium Films Deposited on Si(111) Substrates

In Situ Photoemission Study of Interface and Film Formation During Epitaxial Growth of Er2O3 Film on Si(001) Substrate

Erbium-doped silicon-rich silicon dioxide/silicon thin films fabricated by metal vapour vacuum arc ion source implantation

Surface and Interface of Er2O3 Films Epitaxially Grown on Si Substrate:An X-Ray Photoelectron Spectroscopy Study

The growth of Si overlayers on Er2O3 (111)/Si (111) by solid phase epitaxy

Effects of Er Atoms on Graphitization Process and Structural Defects for Epitaxial Graphene

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Study On The Growth Of Crystalline Er2o3 Films On Si Substrates By Rheed Patterns

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

Quasi-deterministic Localization of Er Emitters in Thin Film TiO$_2$ through Submicron-scale Crystalline Phase Control

Atomic Structure of Sr-induced Reconstructions on the Si(100) Surface

INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION