Abstract:Erbium films were grown on single crystal Si(111) substrates by electron beam vapor deposition. The microstructures of the erbium films were systematically investigated by X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. Results indicate that the surface morphologies and microstructures of the erbium films with Si as substrates are susceptible to the substrate temperatures when the deposition rates are fixed. The pure erbium films with columnar grains were obtained at temperatures below 200 degrees C, but in the films grown at temperatures higher than 350 degrees C, some pinholes that are composed of erbium silicides were found. The pinholes have triangular shapes which is in accordance with the geometry of the underlying Si(111) substrate. The films grown at a substrate temperature equal or greater than 450 degrees C have cracks which would be formed due to the different shrinkage degree of erbium and silicon when the substrate temperature was cooled down to room temperature. The films grown at 200 degrees C show the (002) preferred orientation, which is consistent to the prediction by the theory of surface energy minimization. The deposition rate and deposition time are considered as factors to affect the reaction of the erbium film and the silicon substrate. (C) 2012 Elsevier Ltd. All rights reserved.

Surface and Interface of Er2O3 Films Epitaxially Grown on Si Substrate:An X-Ray Photoelectron Spectroscopy Study

Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates

In Situ Photoemission Study of Interface and Film Formation During Epitaxial Growth of Er2O3 Film on Si(001) Substrate

Investigation on initial growth of Er2O3 films on Si(001)

Study On The Growth Of Crystalline Er2o3 Films On Si Substrates By Rheed Patterns

In situ photoemission study on initial growth of Er2O 3 films on Si(001)

Epitaxial Growth of Er2o3 Films on Si(001)

<i>In situ</i> Photoemission Study on Initial Growth of Er<sub>2</sub>O<sub>3</sub> Films on Si(001)

<i>In situ</i> Photoemission Study on Initial Growth of Er<sub>2</sub>O<sub>3</sub> Films on Si(001)

Epitaxial Growth of Er2O3 Films by MBE

Microstructure of Epitaxial Er2o3 Thin Film on Oxidized Si(111) Substrate

Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si

The growth of Si overlayers on Er2O3 (111)/Si (111) by solid phase epitaxy

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

Thermal Stability of Er2o3 Thin Films Grown Epitaxially on Si Substrates

Influence of Growth Parameters on the Microstructures of Erbium Films Deposited on Si(111) Substrates

Photoemission Study of the Initial Stage of Er/Si(100) Interface Formation

Temperature Effects on the Growth and Electrical Properties of Er2o3 Films on Ge Substrates

Study on the Energy Structure of Amorphous Antireflection Er2o3 Films on Si(001) Substrates

Surface structures of erbium silicide ultra-thin films formed by solid phase epitaxy on Si(100)

Formation of Atomically Smooth Surfaces on Srtio3 Substrates for Epitaxial Film Growth

Surface and Interface of Er2O3 Films Epitaxially Grown on Si Substrate:An X-Ray Photoelectron Spectroscopy Study

Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates

In Situ Photoemission Study of Interface and Film Formation During Epitaxial Growth of Er2O3 Film on Si(001) Substrate

Investigation on initial growth of Er2O3 films on Si(001)

Study On The Growth Of Crystalline Er2o3 Films On Si Substrates By Rheed Patterns

In situ photoemission study on initial growth of Er2O 3 films on Si(001)

Epitaxial Growth of Er2o3 Films on Si(001)

&lt;i&gt;In situ&lt;/i&gt; Photoemission Study on Initial Growth of Er&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Films on Si(001)

<i>In situ</i> Photoemission Study on Initial Growth of Er<sub>2</sub>O<sub>3</sub> Films on Si(001)

Epitaxial Growth of Er2O3 Films by MBE

Microstructure of Epitaxial Er2o3 Thin Film on Oxidized Si(111) Substrate

Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si

The growth of Si overlayers on Er2O3 (111)/Si (111) by solid phase epitaxy

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

Thermal Stability of Er2o3 Thin Films Grown Epitaxially on Si Substrates

Influence of Growth Parameters on the Microstructures of Erbium Films Deposited on Si(111) Substrates

Photoemission Study of the Initial Stage of Er/Si(100) Interface Formation

Temperature Effects on the Growth and Electrical Properties of Er2o3 Films on Ge Substrates

Study on the Energy Structure of Amorphous Antireflection Er2o3 Films on Si(001) Substrates

Surface structures of erbium silicide ultra-thin films formed by solid phase epitaxy on Si(100)

Formation of Atomically Smooth Surfaces on Srtio3 Substrates for Epitaxial Film Growth

<i>In situ</i> Photoemission Study on Initial Growth of Er<sub>2</sub>O<sub>3</sub> Films on Si(001)