Abstract:Erbium-implanted silicon is considered as a promising system to realize electrically-pumped light sources at communication band due to the stable luminescence of Er ions at 1536nm. However, this system suffers from an extremely low luminescence efficiency at room temperature. Quantitatively understanding the energy transfer processes in the system is critical to improving the Er luminescent efficiency, which unfortunately remains ambiguous. In this article, we managed to establish a complete methodology that can quantitatively describe the energy transfer processes from Si to Er. We first employed the Kohlrausch's function to analyze the transient photoluminescence (PL) of Er in silicon at different temperatures, from which we found the emission flux and effective decay rate of excited Er ions in steady-state. These extracted parameters were used in the widely accepted energy transfer processes to analyze Er PL behaviors as a function of temperature (80K-300K) and excitation power. Interestingly, we managed to quantitively find almost all important physical parameters of the energy transfer process including the energy transfer efficiency from Er-related defects to Er ions (21.6% at room temperature), the PhotoLuminescence Quantum Yield (0.45% at room temperature) and a record high optical active Er concentration (2×1019 cm-3). Further careful analysis indicates that the Er/O/B doped silicon has a potential to reach a PLQY of 3.5% if the defects in Si bandgap are properly passivated.

INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

Erbium-doped silicon-rich silicon dioxide/silicon thin films fabricated by metal vapour vacuum arc ion source implantation

Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO$_{2}$:Er Films

Near-infrared Luminescence of Erbium Doped Ga2O3 Films and Devices Based on Silicon: Realization of Energy Transfer

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Visible Photoluminescence Induced in Samples by Si Implantation

Luminescence from Si/SiO 2 with Si Implantation

Quantification of energy transfer processes from crystalline silicon to Erbium

Optically Pumped Mid-Infrared Light Emitter on Silicon

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Photoluminescence and thermal annealing of rare-earth element Er implanted InP

1.54-Mu M Electroluminescence from Si-Rich Erbium Silicate

Effect of Erbium Incorporation on SiNxOy/c-Si Interface in Silicon-Based Optoelectronic Devices