Abstract:The obtention of quantum-grade rare-earth doped oxide thin films that can be integrated with optical cavities and microwave resonators is of great interest for the development of scalable quantum devices. Among the different growth methods, Chemical Vapour Deposition (CVD) offers high flexibility and has demonstrated the ability to produce oxide films hosting rare-earth ions with narrow linewidths. However, growing epitaxial films directly on silicon is challenging by CVD due to a native amorphous oxide layer formation at the interface. In this manuscript, we investigate the CVD growth of erbium-doped yttrium oxide (Er:Y2O3) thin films on different substrates, including silicon, sapphire, quartz or yttria stabilized zirconia (YSZ). Alternatively, growth was also attempted on an epitaxial Y2O3 template layer on Si (111) prepared by molecular beam epitaxy (MBE) in order to circumvent the issue of the amorphous interlayer. We found that the substrate impacts the film morphology and the crystalline orientations, with different textures observed for the CVD film on the MBE-oxide/Si template (111) and epitaxial growth on YSZ (001). In terms of optical properties, Er3+ ions exhibit visible and IR emission features that are comparable for all samples, indicating a high-quality local crystalline environment regardless of the substrate. Our approach opens interesting prospects to integrate such films into scalable devices for optical quantum technologies.

Erbium-doped silicon-rich silicon dioxide/silicon thin films fabricated by metal vapour vacuum arc ion source implantation

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Synthesis Of Er3+ Doped Silicon Based Light Emitting Material By Sol Gel Method

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part II: Photoluminescence

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

Electroluminescence from Metal-Oxide-semiconductor Devices with Erbium-Doped CeO2 Films on Silicon

Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Structural and Photoluminescence Properties of Er2O3Films by Sol-Gel Method

FTIR and XPS Investigation of Er-doped SiO2–TiO2 Films

Fabrication and photoluminescence of Er-doped ZnO thin films on SiO2/Si substrate by pulsed laser deposition

Formation of Ti Silicides by Metal-Vapor Vacuum Arc Ion Source Implantation

Effect of Erbium Incorporation on SiNxOy/c-Si Interface in Silicon-Based Optoelectronic Devices

Erbium doped yttrium oxide thin films grown by chemical vapour deposition for quantum technologies

Erbium Induced Reconstructions On Silicon (100) Substrate

Room-Temperature Photoluminescence from Er3+ in Si-Er-O and Si-Ge-Er-O Thin Films at High Erbium Concentrations