Abstract:In this work, high concentration erbium doping in silicon-rich SiO2 thin films is demonstrated. Si plus Er dual-implanted thermal SiO2 thin films on Si substrates have been fabricated by using a new method, the metal vapor vacuum arc ion source implantation with relatively low ion energy, strong flux and very high dose. X-Ray photoelectron spectroscopy measurement shows that very high Er concentrations on the surfaces of the samples, corresponding to ∼10 at.% or the doping level of ∼1021 atoms cm−3, are achieved. This value is much higher than that obtained by using other fabrication methods such as the high-energy ion implantation and molecular beam epitaxy. Reflective high-energy electron diffraction, atomic force microscopy and cross-section high-resolution transmission electron microscopy observations show that the excess Si atoms in SiO2 matrix accumulate to form Si clusters and then crystallize gradually into Si nanoparticles embedded in SiO2 films during dual-ion implantation followed by rapid thermal annealing. Er segregation and precipitates are not formed. Photoluminescence at the wavelength of 1.54 μm exhibits very weak temperature dependence due to the introduction of Si nanocrystals into the SiO2 matrix. The 1.54-μm light emission signals from annealed samples decrease by less than a factor of 2 when the measuring temperature increases from 77 K to room temperature.

Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation

High Current Metal-Ion Implantation to Fabricate Metal Silicides

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source

Formation of Ti Silicides by Metal-Vapor Vacuum Arc Ion Source Implantation

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

Growth of DySi2Layers on Si Surface by High-Current Dy-Ion Implantation

Formation of the Ersi2 Phase and the Associated Fractal Pattern on the Si Surface Upon High Current Er-Ion Implantation

Formation of Ysi2-X Layers on Si by High-Current Y Ion Implantation

Erbium-doped silicon-rich silicon dioxide/silicon thin films fabricated by metal vapour vacuum arc ion source implantation

Structural and Morphological Evolution Emerging in Si Surface Layers Upon High-Current Tb-Ion Implantation

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity

Formation of Lasi2-X Layers on Si by High-Current La Ion Implantation

Direct Synthesis of Continuous Sm Disilicide Films by Sm-ion Implantation Using a Metal Vapour Vacuum Arc Ion Source

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Surface structures of erbium silicide ultra-thin films formed by solid phase epitaxy on Si(100)

Formation of MoSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation

Reaction of Iron with Amorphous Silicon and Crystal Silicon for the Fabrication of Iron Silicides

Phase-controlled Synthesis of Nickel Silicide Nanostructures