Abstract:The YSi2, LaSi2, CeSi2, PrSi2, NdSi2, SmSi2, GdSi2, TbSi2, DySi2, and ErSi2, layers were formed on Si wafers by respective high current metal-ion implantation using a metal vacuum vapor arc (MEVVA) ion source and the formation temperature was considerable lower than the critical temperatures (300-350 degreesC) required for the rare earth metal silicides by solid-state reaction. It was found that the crystalline structures could be improved with increasing slightly the formation temperature as well as the implantation dose. Concerning the growth kinetics, in some cases, fractal patterns were observed on Si surfaces and the branches of the fractals consisted of the grains of respective precipitated silicides. Interestingly, the fractal dimension increased with formation temperature and eventually approached to a value of 2.0, corresponding to a continuous layer, which was required in practical application. The formation mechanism as well as the growth kinetics was discussed in terms of the far-from-equilibrium process involved in the MEVVA ion implantation.

Growth of DySi2Layers on Si Surface by High-Current Dy-Ion Implantation

Formation of Ysi2-X Layers on Si by High-Current Y Ion Implantation

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

Formation of Ndsi2 Phase by High-Current Nd-Ion Implantation

Structural and Morphological Evolution Emerging in Si Surface Layers Upon High-Current Tb-Ion Implantation

Fabrication of Prsi2 Layers and Associated Morphology on Si Surface by A Single-Step High Current Pr-Ion Implantation

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Formation of Lasi2-X Layers on Si by High-Current La Ion Implantation

Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation

Direct Synthesis of Continuous Sm Disilicide Films by Sm-ion Implantation Using a Metal Vapour Vacuum Arc Ion Source

Formation of the Ersi2 Phase and the Associated Fractal Pattern on the Si Surface Upon High Current Er-Ion Implantation

High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity

Cosi2 Formation by High Current Ion Implantation with A Metal Vapor Vacuum Arc Ion Source

Pattern evolution during the growth of CrSi2 layers on Si (111) upon high current pulsed Cr ion implantation

Formation of N-Type Crsi2 Semiconductor Layers on Si by High-Current Cr Ion Implantation

Epitaxial Cosi2 Layers Fabricated by A Single-Step Technique of High-Current Co-Ion Implantation

Continuous Cosi2 Layers in Silicon Synthesized by Co-Ion Implantation

Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

Low temperature ion beam synthesis of NiSi2 layers with fine electrical property

Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation