Abstract:The changes in the morphology and the electrophysical properties of the Cr/n-Si (111) structure depending on the rapid thermal treatment were considered in this study. The chromium films of about 30 nm thickness were deposited via magnetron sputtering. The rapid thermal treatment was performed by the irradiation of the substrate's back side with the incoherent light flux of the quartz halogen lamps in nitrogen medium up to 200-550 °C. The surface morphology was investigated, including the grain size, the roughness parameters and the specific surface energy using atomic force microscopy. The resistivity value of the chromium films on silicon was determined by means of the four-probe method. It was established that at the temperatures of the rapid thermal treatment up to 350 °С one can observe re-crystallization of the chromium films with preservation of the fine grain morphology of the surface, accompanied by a reduction in the grain sizes, specific surface energy and the value of specific resistivity. At the temperatures of the rapid thermal treatment from 400 to 550 °С there originates the diffusion synthesis of the chromium disilicide CrSi2 with the wave-like surface morphology, followed by an increase in the grain sizes, roughness parameters, the specific surface energy and the specific resistivity value.

Pattern evolution during the growth of CrSi2 layers on Si (111) upon high current pulsed Cr ion implantation

Pattern Evolution of NiSi2 on Si Surface Upon High Current Pulsed Ni Ion Implantation

Formation of N-Type Crsi2 Semiconductor Layers on Si by High-Current Cr Ion Implantation

CrSi2 films synthesized by high current Cr ion implantation and their physical properties

Formation of the Ersi2 Phase and the Associated Fractal Pattern on the Si Surface Upon High Current Er-Ion Implantation

Formation of MoSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation

Fabrication of Prsi2 Layers and Associated Morphology on Si Surface by A Single-Step High Current Pr-Ion Implantation

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Formation of TaSi2 and associated fractal growth on Si surface upon high current pulsed Ta-ion implantation

Growth of DySi2Layers on Si Surface by High-Current Dy-Ion Implantation

Self-organization of CrSi2 nanoislands on Si(111) and growth of monocrystalline silicon with buried multilayers of CrSi2 nanocrystallites

Properties of CrSi2 Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon

Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si : H Single-Layer

Formation of the Patterned Nanocrystalline Si by Pulsed-Laser Interference Crystallization of A-Si:H Thin Films

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Structural and Morphological Evolution Emerging in Si Surface Layers Upon High-Current Tb-Ion Implantation

Aes Study On The Interface Diffusion And Reaction Between Cr Layer And Si3n4/Si Substrate

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Study On The Growth Of Crystalline Er2o3 Films On Si Substrates By Rheed Patterns

Cosi2 Formation by High Current Ion Implantation with A Metal Vapor Vacuum Arc Ion Source