Abstract:Diffusion mediated interaction in metal-substrate assembly during high temperatureannealing leads to possible formation of new composite materials. Here, sputtered grown Ti films on Si3N4/Sisubstrate has been reported to produce titanium nitride and silicide based binary composites while undergoing high vacuum annealing process at temperatures 650 °C andabove. Diffusion of thermally decomposed Si and N atoms from Si3N4 and their subsequent chemical reaction with Ti have been probed by X-ray photo electron spectroscopy. For annealing at 800 °C and above, most of the Si atoms show preferences to stay in elemental form rather than developing silicide phase with Ti. Whereas atlower annealing temperature, silicide becomes the dominant phase for decomposed Si atoms. However, N atoms react promptly with Ti and form TiN which appears as the majority phase for each of the studied annealing temperature. Further, the nitride andsilicide phases across the films have been compared quantitatively for various annealing temperature and the maximum silicide formation is observed for the sample annealed at 780 °C. Finally, the thermally anchored metal-substrate interaction mechanism can be exploited to fabricate disordered superconducting TiNfilms where TiSi2 and Si can be used to tune the level of disorder by altering the annealing temperature.

Aes Study On The Interface Diffusion And Reaction Between Cr Layer And Si3n4/Si Substrate

Interface diffusion and reaction between Ti layer and Si3N4/Si substrate

Interface diffusion and reaction between Ti layer and Si<sub>3</sub>N<sub>4</sub>/Si substrate

Interface diffusion and reaction between Cr layer and diamond particle during metallization

The Study of Interface Diffusion and Reaction Between Cr and Diamond Deposited by Magnetron Sputtering Technigue

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

The Metallization and Interface Reaction Between Diamond Particle and Cr Layer

Atomic Diffusion in the Interface of Fe/Si Prepared by Magnetron Sputtering

A Study of Interface Diffusion and Reaction of Ti/ZrN2/Si Film

Study on the interface reduction of Cr/SiO2 film

Interface Diffusion of Sputtered Cozrnb Films on Silicon Substrate

Interface Features of Carbon Nitride Films Deposited on Si Substrate

Study on Al-induced Crystallization of Al/a-Si:H Bilayer Thin Film

Interface reactions of an Ag/Cr/AlN sandwich during annealing between 250 and 650 °C

Wettability and spreading behavior of Sn–Cr alloys on SiC

Interface study of thermally driven chemical kinetics involved in Ti/Si3N4 based metal-substrate assembly by X-ray photoelectron spectroscopy

Study of the Interface Action Between Lacoo3 Layer and Al2o3 Substrate

Interface Diffusion and Chemical Reaction on the Interface of a PZT Film/si(iii) Sample During Annealing Treatment in N2 and Vacuum

Precipitation and Crystallization of Nanometer Si Clusters in Annealed Si-Rich Sio2 Films

Transition Between Amorphous and Crystalline Phases of SiC Deposited on Si Substrate Using H3SiCH3

Study of nickel silicide formation on Si(1 1 0) substrate