Abstract:In our recently published paper (Y.-Y. Wang et al., High performance LaNiO3-buffered, (001)-oriented PZT piezoelectric films integrated on (111) Si, Appl. Phys. Lett. 121, 182902, 2022), highly (001)-oriented PZT films with a large transverse piezoelectric coefficient e31,f prepared on (111) Si substrates were reported. This work is beneficial for the development of piezoelectric micro-electro-mechanical systems (Piezo-MEMS) because of (111) Si's isotropic mechanical properties and desirable etching characteristics. However, the underlying mechanism for the achievement of a high piezoelectric performance in these PZT films going through a rapid thermal annealing process has not been thoroughly analyzed. In this work, we present complete sets of data in microstructure (XRD, SEM and TEM) and electrical properties (ferroelectric, dielectric and piezoelectric) for these films with typical annealing times of 2, 5, 10 and 15 min. Through data analyses, we revealed competing effects in tuning the electrical properties of these PZT films, i.e., the removal of residual PbO and proliferation of nanopores with an increasing annealing time. The latter turned out to be the dominating factor for a deteriorated piezoelectric performance. Therefore, the PZT film with the shortest annealing time of 2 min showed the largest e31,f piezoelectric coefficient. Furthermore, the performance degradation occurred in the PZT film annealed for 10 min can be explained by a film morphology change, which involved not only the change in grain shape, but also the generation of a large amount of nanopores near its bottom interface.

Interface Diffusion and Chemical Reaction on the Interface of a PZT Film/si(iii) Sample During Annealing Treatment in N2 and Vacuum

Interface Diffusion and Chemical Reaction of Pzt Layer/Si(111) Sample During the Annealing Treatment in Air

Study on the oxidation reaction on the interface of PZT/Si film

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Effect of Annealing Ambience on the Chemical Stability of Zr-Si-N Diffusion Barrier

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Annealing effect on electrical properties of high-k MgZnO film on silicon

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Effects of Pt Diffusion Barrier Layer on the Interface Reaction and Electric Properties of PZT Film/si ( 111 ) Sample

Interface diffusion and reaction between Ti layer and Si3N4/Si substrate

Study of Interface Diffusion and Reaction Between Zr3N4 and Stainless Steel

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Interface diffusion and reaction between Ti layer and Si<sub>3</sub>N<sub>4</sub>/Si substrate

Effect of Annealing Atmosphere on Oxygen Precipitation and Formation of Denuded Zone in Czochralski Silicon Wafer

Microstructure Evolution with Rapid Thermal Annealing Time in (001)-Oriented Piezoelectric PZT Films Integrated on (111) Si

Effect on passivation mechanism and properties of HfO 2 /crystalline-Si interface under different annealing atmosphere

Elemental Diffusion Study of Ge/Al2O3 and Ge/AlN/Al2O3 Interfaces Upon Post Deposition Annealing

Preparation and Effect of Annealing Ambient on Thermal Stability of Cu/ZrSiN/Si Structure

Preparation of Pb(Zr0.52Ti484848)O3 Thin Films on Silicon-on-insulator Substrates by Excimer Laser Deposition Combined with Rapid Thermal Annealing