Abstract:The high-temperature oxidation mechanism of silicon carbide (SiC) is crucial for designing thermal protection systems in aircraft. This study explored the oxidative chemical reaction processes and mechanism on SiC surface and interfaces within the temperature range of 300-2300 K by using reactive molecular dynamics simulation. The oxygen impact on the silica (SiOx) growth of the SiC surface was analyzed, which shows a progressive increase of silica thickness. The simulation results indicated that the oxidation process of SiC was a typical passive oxidation mechanism. With the environmental temperature rising and oxygen impact, the increase of oxidation thickness on the SiC surface undergoes three oxidizing reaction processes: little chemical adsorption of oxygen molecules on the initial surface, rapid oxidation of silicon and carbon, and dramatic oxidation of the interface between the oxidation layer and SiC. Additionally, this work studied the mechanism of oxidation thickness growth and chemical diffusion of oxygen. The oxidation rate is weakened according to the oxygen atom diffusion barrier effect of silica repulsion. Moreover, the kinetic parameters were statistically calculated by fitting the growth of Si-O bonds and their reaction rate constants. Subsequently, the activation energy and pre-exponential factors were derived by using the Arrhenius equation to model the chemical reaction kinetics of the thermal oxidation process. The chemical reaction behaviors of the two stages could be concluded as follows: (i) in stage I, the initial oxidation is reaction rate limiting; (ii) in stage II, SiC oxidation is limited by both the oxidation reaction rate and the oxygen diffusion coefficient of the oxidation layer. The activation energy of stage II increased compared with stage I due to the oxygen atoms diffusion barrier between the oxidation layers. This study on the oxidation and ablation mechanism of the SiC surface at the atomic scale would provide insight into understanding thermal oxidation behavior and the design of ceramic materials.

Study on the oxidation reaction on the interface of PZT/Si film

Interface Diffusion and Chemical Reaction of Pzt Layer/Si(111) Sample During the Annealing Treatment in Air

Interface Diffusion and Chemical Reaction on the Interface of a PZT Film/si(iii) Sample During Annealing Treatment in N2 and Vacuum

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

AN INTERFACE KINETICS STUDY OF OXIDATION PROCESS OF SILICON

Effects of Pt Diffusion Barrier Layer on the Interface Reaction and Electric Properties of PZT Film/si ( 111 ) Sample

Low-Temperature Floating Plasma Oxidation of Poly-SiGe

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

A Study of Interface Diffusion and Reaction of Ti/ZrN2/Si Film

Preparation of Pb(Zr0.52Ti484848)O3 Thin Films on Silicon-on-insulator Substrates by Excimer Laser Deposition Combined with Rapid Thermal Annealing

Effect of Pre-Oxidation of Si3N4 Powders on the Interaction Between Si3N4 Coating and Molten Si

Study on the thermal stability and electrical properties of the high- k dielectrics (ZrO 2 ) x (SiO 2 ) 1− x

Interface diffusion and reaction between Ti layer and Si3N4/Si substrate

Study on the interface reduction of Cr/SiO2 film

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures

Preparation of Pb(Zr0.52Ti0.48)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

Preparation of Pb(Zr<sub>0.52</sub>Ti484848)O<sub>3</sub> thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

Improved Thermal Stability and Oxygen‐Barrier Performance of SiO2 Thin Films by Modifying Amorphous Network Structure

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate