Abstract:Silicon carbide (SiC), an important semiconductor material used in high-power devices, faces the problem of gate oxygen layer formation in traditional Si MOS devices. In view of this, an innovative approach was adopted in the present work to replace the conventional SiO 2 as the gate oxygen layer with a high-k material (ZrO 2 ) so as to investigate its effect on the electrical characteristics of the appliance. In particular ZrO 2 films were deposited on SiC and Si substrates by atomic layer deposition (ALD), and Al was used as the electrode. The atomic force microscopy (AFM) microregion scan revealed a highly flat surface with Rq<1 nm after the ALD growth of ZrO 2 layer. The sample surface analysis via X-ray photoelectron spectroscopy (XPS) suggested the presence of a small amount of ZrO x components. According to the electron energy loss spectrum (EELS), the band gap width (Eg) of this ALD ZrO 2 dielectric was 5.45 eV, which met the requirements for high-quality 4H-SiC-related MOS devices. The electrical properties of the samples were then studied, and the maximum breakdown electric field of the MOS capacitor structure on the SiC substrate was obtained to be more than 10 MV/cm, i.e., nearly twice that of the Si substrate. Based on capacitance-voltage (C-V) measurements, the interface defect density (Dit) near the conduction band of the MOS capacitive structure of the SiC substrate was only on the order of 10 12 eV -1 cm -2 . The movable charge Neffof the oxide layer was also controlled at 10 12 cm -2 . Therefore, the overall performance of the ZrO 2 /SiC structure in terms of electrical properties exceeds that of the ZrO 2 /Si structure and previously reported counterparts. Thus, the combination of the high-k material (ZrO 2 ) and SiC as the substrates in MOS capacitor structures is a very promising research direction.

Study on the thermal stability and electrical properties of the high- k dielectrics (ZrO 2 ) x (SiO 2 ) 1− x

Preparation Of Low-K Nanoporous Sio2 Films By Plasma-Enhanced Chemical Vapor Deposition

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Thermal Stability and Electrical Properties of Zr Silicate Films for High- K Gate-Dielectric Applications, As Prepared by Pulsed Laser Deposition

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Thermal Stability and Interfacial Properties of Zralxsiyoz Films Prepared by Pulse-Laser Deposition

Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser deposition

Structure and Dielectric Properties of Ultra-Thin ZrO2 Films for High- K Gate Dielectric Application Prepared by Pulsed Laser Deposition

Structure and Thermal Stability of (zr0.6al0.4)o1.8 Thin Film on Strained SiGe Layer

Interfacial Properties of High-K Dielectric Cazrox Films Deposited by Pulsed Laser Deposition

Structural, Optical and Electrical Properties of High-K ZrO2 Dielectrics on Si Prepared by Plasma Assisted Pulsed Laser Deposition

Electronic properties of ZrO<sub>2</sub> films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Phase Separation Enhanced Interfacial Reactions in Complex High-K Dielectric Films

Thermal stability and dielectric properties of ultrathin CaZrO x films prepared by pulsed laser deposition

Pulsed Laser Deposition of Zirconium Silicate Thin Films As Candidate Gate Dielectrics

Annealing effect on electrical properties of high-k MgZnO film on silicon

INTERFACIAL MICROSTRUCTURE OF HIGH-κ DIELECTRIC CaZrOx FILMS DEPOSITED BY PULSE LASER DEPOSITION IN LOW OXYGEN PRESSURE

Dielectric Properties of SrZrO3 Thin Films Prepared by Pulsed Laser Deposition

Thermal stability and electrical properties of high-k LaErO3 films

Electronic Properties of ZrO2 Films Fabricated via Atomic Layer Deposition on 4H-SiC and Si Substrates

Improvement of Thermal Stability of Cu/Cu(Zr)/p-SiOC:H Film Stack Using an Ultra-Thin Zr(Ge) Alloy Film As an Exhaustion Interlayer