Abstract:Being an important semiconductor material for high power applications, silicon carbide (SiC) faces the problems while used as a gate oxygen layer in traditional Si MOS devices. In view of this, an innovative approach was adopted in the present work to replace the conventional SiO2 with a high-k material (ZrO2) as the gate oxygen layer to investigate its effect on the electrical characteristics of the devices. In particular ZrO2 films were deposited on Si and SiC substrates by atomic layer deposition (ALD), and Al was used as the electrode. The atomic force microscopy (AFM) microregion scan revealed a highly flat surface with R-q < 1 nm after the ALD growth of ZrO2 layer. The sample surface analysis via x-ray photoelectron spectroscopy (XPS) suggested the presence of a small amount of ZrOx components. According to the electron energy loss spectrum (EELS), the band gap width (E-g) of this ALD ZrO2 dielectric was 5.45 eV, which met the requirements for high-quality 4H-SiC-related MOS devices. The electrical properties of the samples were then studied, and the maximum breakdown voltage of the Al/ZrO2/SiC/Al MOS structure was obtained to be 23 V, i.e., nearly twice that of the Si substrate. As for the oxide layer, the interface defect density (D-it) near the conduction band of the Al/ZrO2/SiC/Al MOS structure was only 10(12) eV(-1) cm(-2) orders of magnitude. The N-eff value (the movable charge) of the structure was also controlled at 10(12) cm(-2). Therefore, the overall performance of the ZrO2/SiC structure in terms of electrical properties exceeded that of the ZrO2/Si structure and previously reported counterparts. In this respect, the ZrO2/SiC MOS capacitor structure has great research potential.

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Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

Study on the thermal stability and electrical properties of the high- k dielectrics (ZrO 2 ) x (SiO 2 ) 1− x

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Thermally induced structural modification in the Al/Zr multilayers

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Thermal Stability of Multilayer Films Pt/Si, W/Si, Mo/Si, and W/C

Improvement of interfacial adhesion strength and thermal stability of cu/cap barrier/low-k dielectric stack by plasma treatment on the surface of Cu film

Thermal stability improvement of ultrathin CoSi2 film formed by TiN capping layer and Co/Ti/Si ternary solid phase reaction

Thermal stability and dielectric properties of ultrathin CaZrO x films prepared by pulsed laser deposition

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Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Enhanced Thermal Stability by Heterogeneous Interface and Columnar Grain in Nanoscale Cu/Ru Multilayers

Investigation on the Interfacial Stability of Multilayered Cu–W Films at Elevated Deposition Temperatures During Co-Sputtering