Abstract:In this work, high concentration erbium doping in silicon-rich SiO2 thin films is demonstrated. Si plus Er dual-implanted thermal SiO2 thin films on Si substrates have been fabricated by using a new method, the metal vapor vacuum arc ion source implantation with relatively low ion energy, strong flux and very high dose. X-Ray photoelectron spectroscopy measurement shows that very high Er concentrations on the surfaces of the samples, corresponding to ∼10 at.% or the doping level of ∼1021 atoms cm−3, are achieved. This value is much higher than that obtained by using other fabrication methods such as the high-energy ion implantation and molecular beam epitaxy. Reflective high-energy electron diffraction, atomic force microscopy and cross-section high-resolution transmission electron microscopy observations show that the excess Si atoms in SiO2 matrix accumulate to form Si clusters and then crystallize gradually into Si nanoparticles embedded in SiO2 films during dual-ion implantation followed by rapid thermal annealing. Er segregation and precipitates are not formed. Photoluminescence at the wavelength of 1.54 μm exhibits very weak temperature dependence due to the introduction of Si nanocrystals into the SiO2 matrix. The 1.54-μm light emission signals from annealed samples decrease by less than a factor of 2 when the measuring temperature increases from 77 K to room temperature.

Formation of the Ersi2 Phase and the Associated Fractal Pattern on the Si Surface Upon High Current Er-Ion Implantation

Formation of MoSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation

Formation of TaSi2 and associated fractal growth on Si surface upon high current pulsed Ta-ion implantation

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Pattern Evolution of NiSi2 on Si Surface Upon High Current Pulsed Ni Ion Implantation

Pattern evolution during the growth of CrSi2 layers on Si (111) upon high current pulsed Cr ion implantation

Formation of Ndsi2 Phase by High-Current Nd-Ion Implantation

Structural and Morphological Evolution Emerging in Si Surface Layers Upon High-Current Tb-Ion Implantation

Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation

Fabrication of Prsi2 Layers and Associated Morphology on Si Surface by A Single-Step High Current Pr-Ion Implantation

Growth of DySi2Layers on Si Surface by High-Current Dy-Ion Implantation

Surface structures of erbium silicide ultra-thin films formed by solid phase epitaxy on Si(100)

Formation of Ysi2-X Layers on Si by High-Current Y Ion Implantation

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Phenomenology of iron-assisted ion beam pattern formation on Si(001)

Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

Formation of Lasi2-X Layers on Si by High-Current La Ion Implantation

Hrem Examination of Er Ion-Implanted in Si

Structure and electrical characterization of amorphous ErSiO films deposited by rf magnetron sputtering on Si (001)

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing