Abstract:In this work, high concentration erbium doping in silicon-rich SiO2 thin films is demonstrated. Si plus Er dual-implanted thermal SiO2 thin films on Si substrates have been fabricated by using a new method, the metal vapor vacuum arc ion source implantation with relatively low ion energy, strong flux and very high dose. X-Ray photoelectron spectroscopy measurement shows that very high Er concentrations on the surfaces of the samples, corresponding to ∼10 at.% or the doping level of ∼1021 atoms cm−3, are achieved. This value is much higher than that obtained by using other fabrication methods such as the high-energy ion implantation and molecular beam epitaxy. Reflective high-energy electron diffraction, atomic force microscopy and cross-section high-resolution transmission electron microscopy observations show that the excess Si atoms in SiO2 matrix accumulate to form Si clusters and then crystallize gradually into Si nanoparticles embedded in SiO2 films during dual-ion implantation followed by rapid thermal annealing. Er segregation and precipitates are not formed. Photoluminescence at the wavelength of 1.54 μm exhibits very weak temperature dependence due to the introduction of Si nanocrystals into the SiO2 matrix. The 1.54-μm light emission signals from annealed samples decrease by less than a factor of 2 when the measuring temperature increases from 77 K to room temperature.

Surface structures of erbium silicide ultra-thin films formed by solid phase epitaxy on Si(100)

From Nanowires To Nanoislands: Morphological Evolutions Of Erbium Silicide Nanostructures Formed On The Vicinal Si(001) Surface

Erbium Induced Reconstructions On Silicon (100) Substrate

Growth of Erbium Silicide Nanowires on Si(001) Surface Studied by Scanning Tunneling Microscopy

Photoemission Study of the Initial Stage of Er/Si(100) Interface Formation

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

The growth of Si overlayers on Er2O3 (111)/Si (111) by solid phase epitaxy

Structural Understanding of Self-Assembled Rare Earth Disilicide Nanostructures Via Scanning Probe Microscopy and First Principles Studies

Heteroepitaxial Er0.49Gd0.51Si1.7 layers formed by channeled ion beam synthesis

Microstructure of Epitaxial Er2o3 Thin Film on Oxidized Si(111) Substrate

Epitaxial ternary Er0.5Y0.5Si1.7 silicide layers formed by channeled ion beam synthesis

In Situ Photoemission Study of Interface and Film Formation During Epitaxial Growth of Er2O3 Film on Si(001) Substrate

Formation and Evolution of Erbium Silicide Nanowires on Vicinal and Flat Si(001)

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

Electronic Structure of Yb/H–Si (111) Interface

Formation of the Ersi2 Phase and the Associated Fractal Pattern on the Si Surface Upon High Current Er-Ion Implantation

Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate

Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates