Abstract:This paper presents the results of a study of the state of ytterbium atoms in silicon, carried out using the methods of Fourier transform infrared spectroscopy (IR) and Raman spectroscopy (RS). Silicon samples doped with ytterbium impurities were analyzed using FSM-2201 and SENTERRA II Bruker spectrometers. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. The results of the study confirm that doping silicon with ytterbium impurities leads to a decrease in the concentration of optically active oxygen by 30-40%, depending on the concentration of the introduced impurities. It was also found that an increase in the number of defects leads to a broadening of the amorphous zone. It is assumed that similar dependencies exist for the Si-Yb system; however, to the best of our knowledge, similar results have not been reported previously. It is noted that the relative intensity of the three Raman bands in Si-Yb systems in the LTIOS (The light and temperature induced ordered state) state changes, and the relative intensity of Si-Si decreases. This indicates that pendant bonds are mainly formed by the breaking of Si-Si bonds. It was also observed that the light intensity causing this condition is far from that required for laser or solid phase crystallization. Using the Raman spectroscopy method, a structural transformation was discovered, expressed in a densely packed array of nanocrystals with a size of less than 11 lattice parameters. Small clusters were under strong internal stress (up to 3 GPa), which probably prevents the cluster size from increasing beyond the critical value for irreversible crystallization.

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Heteroepitaxial Er0.49Gd0.51Si1.7 layers formed by channeled ion beam synthesis

Surface structures of erbium silicide ultra-thin films formed by solid phase epitaxy on Si(100)

Growth Of Pinhole-Free Ytterbium Silicide Film By Solid-State Reaction On Si(001) With A Thin Amorphous Si Interlayer

Electronic Structure of Yb/H–Si (111) Interface

Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation

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Formation of Ysi2-X Layers on Si by High-Current Y Ion Implantation

The growth of Si1-yCy alloy on 6H-SiC homoepitaxial layers

From Nanowires To Nanoislands: Morphological Evolutions Of Erbium Silicide Nanostructures Formed On The Vicinal Si(001) Surface

Formation and properties of ternary silicide (Co/sub x/Ni/sub 1-x/)Si/sub 2/ thin films

Growth of Si1-x-yGexCy ternary alloy on Si by chemical vapor deposition

A High-Entropy Silicide: (Mo0.2Nb0.2Ta0.2Ti0.2W0.2)Si2

Silicidation of Ni(Yb) Film on Si(001)

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

Epitaxial Growth of Er2o3 Films on Si(001)

Yttrium Silicide Formation and Its Contact Properties on Si(100)

Epitaxial Growth of YBa2Cu3O7/CeO2/YSZ Thin Films on Silicon-on-insulator Substrates

Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate

The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates

Structural Properties of Silicon Doped Rare Earth Elements Ytterbium