Abstract:A thin amorphous Si (a-Si) interlayer is produced between the sputtering deposited ytterbium layer and Si(001) substrate, and the growth of the ytterbium silicide (YbSi2-x) film is investigated in this paper. Formation of YbSi2-x was verified by x-ray diffraction (XRD). The silicide film morphology was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). SEM results reveal that without the a-Si interlayer, pinholes form during YbSi2-x formation on Si(001). Furthermore, the XRD results demonstrate that there is a strong epitaxial relationship between the formed YbSi2-x and Si(001) substrate, and it is believed to be the reason for the formation of pinholes. To suppress the formation of pinholes, a thin a-Si interlayer with different thicknesses is introduced on the Si(001) substrate prior to Yb film deposition. The a-Si interlayer is produced by either sputter deposition employing a Si target or by Si ion implantation induced amorphization. In the presence of this thin a-Si interlayer, epitaxial growth of YbSi2-x is greatly suppressed even when the a-Si interlayer is so thin that full silicidation of the deposited Yb film still requires consumption of Si atoms from the Si(001) substrate. Fabrication of a pinhole-free YbSi2-x film is also demonstrated by SEM and AFM. The growth mechanism of the pinhole-free YbS'2--, film in the presence of a thin a-Si interlayer is discussed. (c) 2007 American Institute of Physics.

Yttrium Silicide Formation and Its Contact Properties on Si(100)

Electronic Structure of Yb/H–Si (111) Interface

Study of Ni/Si(100) solid-state reaction with Y addition

Formation of Ysi2-X Layers on Si by High-Current Y Ion Implantation

Growth Of Pinhole-Free Ytterbium Silicide Film By Solid-State Reaction On Si(001) With A Thin Amorphous Si Interlayer

Silicidation of Ni(Yb) Film on Si(001)

Study of Ni/Si(1 0 0) solid-state reaction with Y addition

I – V – T Studies on Ni-silicide/n-Si(100) Contacts Formed by Ti–Ni–Si Solid State Reaction

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Characterization of thermal stability of Ni(SiGe)/n-SiGe contact formed by isothermal annealing

Ab Initio Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface

Ni(Pt)Si Thin Film Formation and Its Electrical Characteristics with Si Substrate

Study of Nickel Silicide Formation on Si(110) Substrate

Structure and Growth of Quasi-One-dimensional YSi2nanophases on Si(100)

Pt interlayer effects on Ni germanosilicide formation and contact properties

I-V-T studies on ternary silicide Co1-xNixSi2/n-Si Schottky contacts

Crystallinity and composition of Sc1−x(−y)Si x (P y ) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Study of nickel silicide formation on Si(1 1 0) substrate

Thermal Stability of Electrical Characteristics of Nickel Silicide Metal Gate

Nickel silicide formation on Si(110) substrate

Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer