Abstract:Characterization of paramagnetic compounds, in particular regarding the detailed conformation and electronic structure, remains a challenge, and - still today it often relies solely on the use of X-ray crystallography, thus limiting the access to electronic structure information. This is particularly true for lanthanide elements that are often associated with peculiar structural and electronic features in relation to their partially filled f-shell. Here, we develop a methodology based on the combined use of state-of-the-art magnetic resonance spectroscopies (EPR and solid-state NMR) and computational approaches as well as magnetic susceptibility measurements to determine the electronic structure and geometry of a paramagnetic Yb(III) alkyl complex, Yb(III)[CH(SiMe3)2]3, a prototypical example, which contains notable structural features according to X-ray crystallography. Each of these techniques revealed specific information about the geometry and electronic structure of the complex. Taken together, both EPR and NMR, augmented by quantum chemical calculations, provide a detailed and complementary understanding of such paramagnetic compounds. In particular, the EPR and NMR signatures point to the presence of three-centre-two-electron Yb-γ-Me-β–Si secondary metal-ligand interactions in this otherwise tri-coordinate metal complex, similarly to its diamagnetic Lu analogues. The electronic structure of Yb(III) can be described as a single 4f13 configuration, while an unusually large crystal-field splitting results in a thermally isolated ground Kramers doublet. Furthermore, the computational data indicate that the Yb-carbon bond contains some π-character, reminiscent of the so-called α-H agostic interaction.

Electronic Structure of Yb/H–Si (111) Interface

Electronic Structure of Yb2.75c60

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Yttrium Silicide Formation and Its Contact Properties on Si(100)

X-ray Photoemission Studies of Yb Intercalated C60 Thin Film

Synchrotron Radiation Photoemission Study Of Yb-Intercalated C-60

Structural Properties of Silicon Doped Rare Earth Elements Ytterbium

Electron energy-loss spectroscopy investigation of Y2O3 films on Si (001) substrate

Growth Of Pinhole-Free Ytterbium Silicide Film By Solid-State Reaction On Si(001) With A Thin Amorphous Si Interlayer

Silicidation of Ni(Yb) Film on Si(001)

Formation of the Schottky Barrier at (3 × 1)na/si(111) Surface

Electronic-Structure And Its Dependence On Local Order For H/Si(111)-(1x1) Surfaces

Analyticity of the Phase Shift and Reflectivity of Electrons at a Metal-Semiconductor Interface

Ab Initio Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface

Electronic structure of the Ge/Si(105) hetero-interface

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Study on Band Structure of YbB6 and Analysis of Its Optical Conductivity Spectrum

Structural Understanding of Self-Assembled Rare Earth Disilicide Nanostructures Via Scanning Probe Microscopy and First Principles Studies

Geometry and Electronic Structure of Yb(III)[CH(SiMe3)2]3 from EPR and solid-state NMR augmented by Computations

Photoemission Study of the Initial Stage of Er/Si(100) Interface Formation