Abstract:Epitaxial NiSi2 thin films are formed by annealing of Ni on sulfur-implanted silicon (100). The atomic structure and chemistry of the NiSi2/Si interface are investigated by aberration-corrected transmission electron microscopy. The interface is atomically sharp and runs mainly along the (100) plane. {111} segments of interface are also observed as minor facets. The atomic structure of the (100) and (111) interface has been determined. Interfacial dislocations with Burgers vectors a/4<111> and a/2<110> are observed near {111} facets. In particular, these dislocations have extra half atomic planes in the Si substrate. This configuration of dislocation does not agree with the sign of the lattice mismatch between bulk NiSi2 and Si. This novel phenomenon is understood by the fact that a high concentration of sulfur in the interface area leads to an expansion of the NiSi2 lattice and thus inverts the sign of the lattice mismatch. It is suggested that the change of the strain status, in addition to the doping effect of S, also plays a role in the tunable Schottky barrier height in this system.

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Formation of the Schottky barrier at (3 × 1)NaSi(111) surface

STUDIES OF Na ADSORBED ORDERLY AND DISORDERLY ON Si(111) SURFACE USING PES

Photoemission Study of the Initial Stage of Er/Si(100) Interface Formation

Si(111)-$\sqrt{21}\times\sqrt{21}$-(Ag+Cs) Surface Studied by Scanning Tunneling Microscopy and Angle-Resolved Photoemission Spectroscopy

Photoemission Study of the Sm/Si(100)2×1 Interface

Geometric and Electronic Structures at the Interface Between Iron Phthalocyanine and Si (110)

Study on the interface between the organic and inorganic semiconductors

Surface Vs. Bulk Electronic Structure of Silver Determined by Photoemission

THEORETICAL STUDY OF THE ELECTRONIC STRUCTURES OF Si(111) SURFACE

NiSi2/Si interface chemistry and epitaxial growth mode

SRPES STUDY OF THE Sm/Si(100) INTERFACE FORMATION AND ELECTRONIC STRUCTURES

Interface structure and photoelectric properties of heterojunction thin films materials

Surface And Interface Study Of U/Si (111)

Structural Investigation of the So-Called Ca/Si(111)-(5× 1) Surface

Interface dipole and Schottky barrier formation at Au/CdZnTe(111)A interfaces

Interface reconstructed structure of Ag/Si(111) revealed by X-ray diffraction

Electronic Structures of Β-Si3n4(0001)/si(111) Interfaces: Perfect Bonding and Dangling Bond Effects

Photoemission study of a-Si:H/a-SiNx:H interface formation

X-ray and Ultraviolet Photoemission Study of the Formation and Band Lineup of C60/Si(111) Interface

First-Principles Study of Electronic Structure,Surface Energy,Work Function of Si(111) Surface