Synchrotron radiation studies on metal/semiconductor interface electronic structures

X.Y. Zhang,P.S. Xu,S.H. Xu,H.B. Pan,E.D. Lu,X.F. Jin,R.C. Fang
DOI: https://doi.org/10.1016/0368-2048(96)02945-3
IF: 1.993
1996-01-01
Journal of Electron Spectroscopy and Related Phenomena
Abstract:Some progresses of the photoemission study on metal/semiconductor interfaces with synchrotron radiation at NSRL are reviewed in this paper. The possibility that the magnetic ordering exists in the ultra-thin overlayer of Mn on semiconductor surface is proposed. The formation of interface for Sm/Si(100)2×1 and its thermal evolution have been investigated. For alkali and alkali-earth metal doped C60 the doping effect and the interaction between doping and C60 have been studied. Finally, the interface formation and the band offsets of Ge/ZnS(111) and Ge/ZnSe(100) are discussed in the text.
What problem does this paper attempt to address?