Abstract:We report on the preferred trilayer growth of indium films on Si(111) studied by angle-resolved photoemission spectroscopy. By employing an interfactant and optimized annealing conditions, the kinetic constraint on the In atoms due to the substrate is greatly reduced and 'electronic growth'-where film morphology is controlled by the quantized electronic structure of the film-can be achieved at low coverage. Our photoemission spectra reveal that films of 4 ML (monolayers) and 7 ML thicknesses are energetically favored due to a lower surface energy, as confirmed by theoretical calculations. A detailed comparison of the photoemission spectra between In films grown on the In-√3 × √3/Si(111) surface and those on the Si(111) 7 × 7 surface shows that the √3 × √3 interfactant is a better template for growing In films at low coverage and effectively reduces the electronic coupling between the film and the substrate. In addition, the observed band structures of In films are in reasonable agreement with first-principles calculations and suggest that In films grown on the √3 × √3 interfactant might already be close to the bulk-like body-centered tetragonal structure at around 10 ML.

In Situ Photoemission Study of Interface and Film Formation During Epitaxial Growth of Er2O3 Film on Si(001) Substrate

In situ photoemission study on initial growth of Er2O 3 films on Si(001)

<i>In situ</i> Photoemission Study on Initial Growth of Er<sub>2</sub>O<sub>3</sub> Films on Si(001)

<i>In situ</i> Photoemission Study on Initial Growth of Er<sub>2</sub>O<sub>3</sub> Films on Si(001)

Surface and Interface of Er2O3 Films Epitaxially Grown on Si Substrate:An X-Ray Photoelectron Spectroscopy Study

Investigation on initial growth of Er2O3 films on Si(001)

Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates

Study On The Growth Of Crystalline Er2o3 Films On Si Substrates By Rheed Patterns

Photoemission Study of the Initial Stage of Er/Si(100) Interface Formation

Epitaxial Growth of Er2o3 Films on Si(001)

Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si

The growth of Si overlayers on Er2O3 (111)/Si (111) by solid phase epitaxy

In Situ Photoemission Study on Initial Growth of HfO2 Films on Si(1 0 0)

Microstructure of Epitaxial Er2o3 Thin Film on Oxidized Si(111) Substrate

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Thermal Stability of Er2o3 Thin Films Grown Epitaxially on Si Substrates

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

Epitaxial Growth of Er2O3 Films by MBE

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Superior Electrical Properties of Crystalline Er2O3 Films Epitaxially Grown on Si Substrates

In Situ Photoemission Study of Interface and Film Formation During Epitaxial Growth of Er2O3 Film on Si(001) Substrate

In situ photoemission study on initial growth of Er2O 3 films on Si(001)

&lt;i&gt;In situ&lt;/i&gt; Photoemission Study on Initial Growth of Er&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Films on Si(001)

<i>In situ</i> Photoemission Study on Initial Growth of Er<sub>2</sub>O<sub>3</sub> Films on Si(001)

Surface and Interface of Er2O3 Films Epitaxially Grown on Si Substrate:An X-Ray Photoelectron Spectroscopy Study

Investigation on initial growth of Er2O3 films on Si(001)

Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates

Study On The Growth Of Crystalline Er2o3 Films On Si Substrates By Rheed Patterns

Photoemission Study of the Initial Stage of Er/Si(100) Interface Formation

Epitaxial Growth of Er2o3 Films on Si(001)

Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si

The growth of Si overlayers on Er2O3 (111)/Si (111) by solid phase epitaxy

In Situ Photoemission Study on Initial Growth of HfO2 Films on Si(1 0 0)

Microstructure of Epitaxial Er2o3 Thin Film on Oxidized Si(111) Substrate

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Thermal Stability of Er2o3 Thin Films Grown Epitaxially on Si Substrates

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

Epitaxial Growth of Er2O3 Films by MBE

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Superior Electrical Properties of Crystalline Er2O3 Films Epitaxially Grown on Si Substrates

<i>In situ</i> Photoemission Study on Initial Growth of Er<sub>2</sub>O<sub>3</sub> Films on Si(001)