Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si

Epitaxial Growth of Er2O3 Films by MBE

Epitaxial Growth of Er2o3 Films on Si(001)

Investigation on initial growth of Er2O3 films on Si(001)

Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates

Thermal Stability of Er2o3 Thin Films Grown Epitaxially on Si Substrates

Study On The Growth Of Crystalline Er2o3 Films On Si Substrates By Rheed Patterns

In Situ Photoemission Study of Interface and Film Formation During Epitaxial Growth of Er2O3 Film on Si(001) Substrate

Surface and Interface of Er2O3 Films Epitaxially Grown on Si Substrate:An X-Ray Photoelectron Spectroscopy Study

Band Offsets Of Er2o3 Films Epitaxially Grown On Si Substrates

Temperature Effects on the Growth and Electrical Properties of Er2o3 Films on Ge Substrates

Microstructure of Epitaxial Er2o3 Thin Film on Oxidized Si(111) Substrate

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

In situ photoemission study on initial growth of Er2O 3 films on Si(001)

<i>In situ</i> Photoemission Study on Initial Growth of Er<sub>2</sub>O<sub>3</sub> Films on Si(001)

The growth of Si overlayers on Er2O3 (111)/Si (111) by solid phase epitaxy

Superior Electrical Properties of Crystalline Er2O3 Films Epitaxially Grown on Si Substrates

Epitaxial growth of CeO2(1 0 0) films on Si(1 0 0) substrates by dual ion beams reactive sputtering

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation