Momentum-resolved Electronic Structure and Band Offsets in an Epitaxial NbN/GaN Superconductor/semiconductor Heterojunction.

Tianlun Yu,John Wright,Guru Khalsa,Betul Pamuk,Celesta S. Chang,Yury Matveyev,Xiaoqiang Wang,Thorsten Schmitt,Donglai Feng,David A. Muller,Huili Grace Xing,Debdeep Jena,Vladimir N. Strocov
DOI: https://doi.org/10.1126/sciadv.abi5833
IF: 13.6
2021-01-01
Science Advances
Abstract:The electronic structure of heterointerfaces is a pivotal factor for their device functionality. We use soft x-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures on both sides of the Schottky heterointerface formed by epitaxial films of the superconducting NbN on semiconducting GaN, and determine their momentum-dependent interfacial band offset as well as the band-bending profile. We find, in particular, that the Fermi states in NbN are well separated in energy and momentum from the states in GaN, excluding any notable electronic cross-talk of the superconducting states in NbN to GaN. We support the experimental findings with first-principles calculations for bulk NbN and GaN. The Schottky barrier height obtained from photoemission is corroborated by electronic transport and optical measurements. The momentum-resolved understanding of electronic properties of interfaces elucidated in our work opens up new frontiers for the quantum materials where interfacial states play a defining role.
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