Abstract:Semiconductor-superconductor hybrid materials are used as a platform to realise Andreev bound states, which hold great promise for quantum applications. These states require transparent interfaces between the semiconductor and superconductor, which are typically realised by in-situ deposition of an Al superconducting layer. Here we present a hybrid material based on an InAs two-dimensional electron gas (2DEG) combined with in-situ deposited Nb and NbTi superconductors, which offer a larger operating range in temperature and magnetic field due to their larger superconducting gap. We overcome the inherent difficulty associated with the formation of an amorphous interface between III-V semiconductors and Nb-based superconductors by introducing a 7 nm Al interlayer. The Al interlayer provides an epitaxial connection between an in-situ magnetron sputtered Nb or NbTi thin film and a shallow InAs 2DEG. This metal-to-metal epitaxy is achieved by optimization of the material stack and results in an induced superconducting gap of approximately 1 meV, determined from transport measurements of superconductor-semiconductor Josephson junctions. This induced gap is approximately five times larger than the values reported for Al-based hybrid materials and indicates the formation of highly-transparent interfaces that are required in high-quality hybrid material platforms.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to develop a semiconductor - superconductor hybrid two - dimensional electron gas (2DEG) platform based on niobium nitride (Nb) and niobium - titanium nitride (NbTi) in order to achieve a higher - quality transparent interface and thus improve the performance of materials in quantum applications. Specifically, by introducing a 7 - nanometer - thick aluminum (Al) layer as an intermediate layer, the researchers overcame the problem of forming an amorphous interface between III - V semiconductors and Nb - based superconductors. This method not only improved the interface quality but also significantly increased the size of the induced superconducting energy gap, reaching approximately 1 millielectron volt (meV), which is about five times the previously reported value using aluminum - based materials. ### Main research contents and achievements: 1. **Construction of the material platform**: The research team constructed a new semiconductor - superconductor hybrid material platform. This platform is based on InAs 2DEG and has an Nb or NbTi superconducting layer added by in - situ deposition technology. To overcome the incompatibility between III - V semiconductors and Nb - based superconductors, they introduced a 7 - nanometer - thick Al intermediate layer. This Al layer not only provides lattice matching but also forms a highly transparent interface. 2. **Interface optimization**: Different - thickness Al layers were studied by scanning transmission electron microscopy (STEM), and it was found that the 7 - nanometer - thick Al layer can provide the best interface quality. In addition, by adding 2 monolayers (ML) of GaAs on top of InGaAs as a capping layer, the diffusion of indium (In) can be effectively suppressed, further optimizing the material structure. 3. **Analysis of transport properties**: The research team fabricated Josephson Junctions (JJs) and determined the induced superconducting energy gap to be approximately 1 meV through Multiple Andreev Reflection (MAR) measurements. These results indicate that this material platform has a highly transparent interface and is suitable for applications in quantum devices. 4. **Extension to NbTi**: The research also explored the possibility of applying this method to NbTi. The results show that NbTi can also form a high - quality interface with the Al intermediate layer and has a higher critical magnetic field and critical temperature, further expanding the application range of this material platform. ### Conclusion: By introducing a 7 - nanometer - thick Al intermediate layer, the research team successfully solved the problem of forming an amorphous interface between III - V semiconductors and Nb - based superconductors, achieving a high - quality transparent interface and a significantly increased induced superconducting energy gap. These achievements lay the foundation for the development of high - performance semiconductor - superconductor hybrid material platforms and are expected to play an important role in quantum computing and other quantum applications.

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