Abstract:Semiconductor InSb nanowires are expected to provide an excellent material platform for the study of Majorana fermions in solid state systems. Here, we report on the realization of a Nb-InSb nanowire-Nb hybrid quantum device and the observation of a zero-bias conductance peak structure in the device. An InSb nanowire quantum dot is formed in the device between the two Nb contacts. Due to the proximity effect, the InSb nanowire segments covered by the superconductor Nb contacts turn to superconductors with a superconducting energy gap Delta(InSb) similar to 0.25 meV. A tunable critical supercurrent is observed in the device in high back gate voltage regions in which the Fermi level in the InSb nanowire is located above the tunneling barriers of the quantum dot and the device is open to conduction. When a perpendicular magnetic field is applied to the devices, the critical supercurrent is seen to decrease as the magnetic field increases. However, at sufficiently low back gate voltages, the device shows the quasi-particle Coulomb blockade characteristics and the supercurrent is strongly suppressed even at zero magnetic field. This transport characteristic changes when a perpendicular magnetic field stronger than a critical value, at which the Zeeman energy in the InSb nanowire is E-z similar to Delta(Insb), is applied to the device. In this case, the transport measurements show a conductance peak at the zero bias voltage and the entire InSb nanowire in the device behaves as in a topological superconductor phase. We also show that this zero-bias conductance peak structure can persist over a large range of applied magnetic fields and could be interpreted as a transport signature of Majorana fermions in the InSb nanowire.

Coexistence of Induced Superconductivity and Quantum Hall States in InSb Nanosheets

Non-Majorana Origin of the Half-Quantized Conductance Plateau in Quantum Anomalous Hall Insulator and Superconductor Hybrid Structures

Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets.

Quantum Hall Effect in a Josephson Junction

Study of 0-$π$ phase transition in hybrid superconductor-InSb nanowire quantum dot devices

Anomalous Zero-Bias Conductance Peak in A Nb-Insb Nanowire-Nb Hybrid Device

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

Hybrid Superconductor-Quantum Point Contact Devices using InSb Nanowires

Spectroscopic Visualization of Hard Quasi-1D Superconductivity Induced in Nanowires Deposited on a Quasi-2D Indium film

Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions

Supercurrent and Multiple Andreev Reflections in InSb Nanosheet SNS Junctions

0-Pi Phase Transition In Hybrid Superconductor-Insb Nanowire Quantum Dot Devices

Superconducting Proximity in Intrinsic Magnetic Topological Insulator MnBi2Te4-NbN Hybrid Device Modulated by Coulomb Blockade Effect.

Proximity-effect-induced Superconductivity in a Van Der Waals Heterostructure Consisting of a Magnetic Topological Insulator and a Conventional Superconductor

Epitaxial Indium on PbTe Nanowires for Quantum Devices

Induced superconducting correlations in a quantum anomalous Hall insulator

Inducing superconductivity in quantum anomalous Hall regime

Role of interface hybridization on induced superconductivity in 1T$^\prime$-WTe$_2$ and 2H-NbSe$_2$ heterostructures

Proximity effect induced intriguing superconductivity in van der Waals heterostructure of magnetic topological insulator and conventional superconductor

Inter-Landau-level Andreev Reflection at the Dirac Point in a Graphene Quantum Hall State Coupled to a NbSe2 Superconductor