Abstract:In a well-ordered crystalline solid, insulating behaviour can arise from two mechanisms: electrons can either scatter off a periodic potential, thus forming band gaps that can lead to a band insulator, or they localize due to strong interactions, resulting in a Mott insulator. For an even number of electrons per unit cell, either band- or Mott-insulators can theoretically occur. However, unambiguously identifying an unconventional Mott-insulator with an even number of electrons experimentally has remained a longstanding challenge due to the lack of a momentum-resolved fingerprint. This challenge has recently become pressing for the layer dimerized van der Waals compound Nb$_3$Br$_8$, which exhibits a puzzling magnetic field-free diode effect when used as a weak link in Josephson junctions, but has previously been considered to be a band-insulator. In this work, we present a unique momentum-resolved signature of a Mott-insulating phase in the spectral function of Nb$_3$Br$_8$: the top of the highest occupied band along the out-of-plane dimerization direction $k_z$ has a momentum space separation of $\Delta k_z=2\pi/d$, whereas the valence band maximum of a band insulator would be separated by less than $\Delta k_z=\pi/d$, where $d$ is the average spacing between the layers. As the strong electron correlations inherent in Mott insulators can lead to unconventional superconductivity, identifying Nb$_3$Br$_8$ as an unconventional Mott-insulator is crucial for understanding its apparent time-reversal symmetry breaking Josephson diode effect. Moreover, the momentum-resolved signature employed here could be used to detect quantum phase transition between band- and Mott-insulating phases in van der Waals heterostructures, where interlayer interactions and correlations can be easily tuned to drive such transition.

What problem does this paper attempt to address?

The problem this paper attempts to address is determining whether Nb₃Br₈ is an unconventional Mott insulator rather than a previously thought band insulator. Specifically, Nb₃Br₈ forms a layered dimerized structure at low temperatures and exhibits a Josephson diode effect (JDE) without a magnetic field in Josephson junctions, prompting a reevaluation of its insulating properties. The paper investigates the spectral function of Nb₃Br₈ using momentum-resolved methods to identify key features that distinguish a band insulator from a Mott insulator. ### Main Issues: 1. **Distinguishing Band Insulator and Mott Insulator**: How to experimentally distinguish whether Nb₃Br₈ is a band insulator or a Mott insulator, as both exhibit similar energy gaps in their spectra. 2. **Explaining the JDE Phenomenon**: If Nb₃Br₈ is an unconventional Mott insulator, this could help explain the time-reversal symmetry-breaking diode effect observed in Josephson junctions. ### Solutions: - **Momentum-Resolved Fingerprint**: The paper proposes a new momentum-resolved fingerprint method to distinguish between a band insulator and a Mott insulator by analyzing the momentum space position of the highest occupied band. Specifically, for a band insulator, the maximum of the highest occupied band is separated in momentum space by ∆kz < π/d; for a Mott insulator, the separation is ∆kz = 2π/d, where d is the interlayer spacing. - **Experimental Verification**: Using angle-resolved photoemission spectroscopy (ARPES) and infrared absorption spectroscopy experiments, the spectral function of Nb₃Br₈ was verified, revealing that the momentum space separation of the highest occupied band is ∆kz ≈ 2π/d, consistent with the characteristics of a Mott insulator. ### Conclusion: - **Nb₃Br₈ is a Mott Insulator**: Experimental results indicate that the highest occupied band in the momentum space of Nb₃Br₈ is separated by 2π/d, confirming it as an unconventional Mott insulator. - **Further Research**: This discovery will promote research on charge transfer at the Nb₃Br₈/NbSe₂ interface, which may explain the time-reversal symmetry-breaking superconductivity and the JDE phenomenon without a magnetic field. Additionally, this method can be applied to other strongly correlated insulators to help identify and understand the quantum phase transition from a band insulator to a Mott insulator.

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