Studies of Mn/ZnO (0001̄) Interfacial Formation and Electronic Properties with Synchrotron Radiation

C. W. Zou,P. S. Xu,Y. Y. Wu,B. Sun,F. Q. Xu,H. B. Pan,H. T. Yuan,X. L. Du
DOI: https://doi.org/10.1063/1.2436378
2007-01-01
AIP Conference Proceedings
Abstract:The initial growth, interfacial reaction and Fermi level movement of Mn on the O-terminated Zn (000 (1) over bar) surface have been investigated by using synchrotron radiation photoelectron spectroscopy (SRPES) and X-ray photoemission (XPS). Mn is found to be grown on the surface in the layer-by-layer (Frank-van der Merwe) mode and be quite stable on the O-terminated surface at room temperature. With increasing the coverage of Mn, a downward Fermi level movement in band structure measurement of SRPES is observed and the resultant Schottky Barrier Height (SBH) is calculated to be about 1.1 eV. Annealing behavior of the interface is investigated and we find that annealing at 600 degrees C induces a pronounced Mn-Zn atoms exchange reaction at the interface.
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