Tracking the Interface of an Individual Zns/Zno Nano-Heterostructure

Zhiqiang Wang,Jian Wang,Tsun-Kong Sham,Shaoguang Yang
DOI: https://doi.org/10.1021/jp301289x
2012-01-01
Abstract:Understanding and controlling the electronic structure in semiconductor heterostructures is of foremost importance in order to achieve their promise in broad applications. Here we report the chemical mapping and the electronic structure of a single ZnS nanobelt/ZnO nanorod heterostructure by scanning transmission X-ray microscopy. It is the first time that nanoscaled spectroscopy across the interface between the ZnS and ZnO nanocomponents is studied in detail. Nano-X-ray absorption near edge structure at both O K-edge and Zn L-3,L-2-edge indicates that ZnO was anchored underneath the side surfaces of ZnS nanobelt. The threshold shift of the edge energy across the ZnS/ZnO interface illustrates an upward movement of the unoccupied states of O character in the conduction band of ZnO and a downward movement of the unoccupied states of S character in the conduction band of ZnS, revealing the effect of the interface on band alignments of the ZnS/ZnO nanocomposite.
What problem does this paper attempt to address?