Measuring the Electrical Characteristics of Individual Junctions in the SnO2 Capped ZnO Nanowire Arrays on Zn Substrate

Y. Liu,S. Wang,Z. Y. Zhang,L. -M. Peng,L. Shi,Quan Li
DOI: https://doi.org/10.1063/1.2837060
IF: 4
2008-01-01
Applied Physics Letters
Abstract:Direct measurements on electrical characteristics have been carried out in situ inside a scanning electron microscope using a multiple nanoprobe system on individual SnO2 capped ZnO nanowires (NWs) within a NW film on a Zn substrate. It is shown that while good Ohmic contacts can be made at Zn–ZnO NW and ZnO NW–SnO2 cap (when heavily doped with Zn) junctions, the overall I-V characteristics of the Zn–ZnO–SnO2 junction system differ significantly among different NWs, suggesting doping inhomogeneity in the NW film.
What problem does this paper attempt to address?