Abstract:Electrical characterization of semiconducting oxide nanowires (NWs) is mostly performed using complex techniques, which necessitates a series of costly nanofabrication procedures. In this work, with the aim to provide a low-cost, feasible, facile, and reproducible approach for enabling the study of NW electrical properties, we report direct electrical measurements on individual and overlapped suspended zinc oxide NWs (ZnO NWs). We have succeeded in constructing both two- and three-terminal devices simply by employing tungsten (W) nanoprobes with the aid of a nanomanipulation system embedded inside a scanning electron microscope’s vacuum chamber. Stable contacts were established using the Joule heating effect and e-beam exposure at the junctions between the NW and the pre-cleaned W tips. P-channel field-effect transistor devices were achieved with an on–off current ratio of ∼101, a threshold voltage (>1.5 V), a transconductance of ∼16 μS, a sub-threshold swing of ∼220 mV/decade, and field-effect carrier mobility roughly estimated to be around 926.4 cm2/(V·s) after correction for contact resistances/optimization. The average resistivity of ZnO NWs was calculated to be ∼2.23 × 10–2 Ω·cm for NWs with diameters between 70 and 500 nm. Besides, we have demonstrated a contact resistance of ∼19.60 kΩ and a Schottky barrier height of ∼0.37 eV present at W/ZnO NW interfaces. The contact resistance between two overlapped ZnO NWs was estimated to be ∼283 kΩ, which is relatively higher than that offered between W/ZnO NWs. This work provides a solid experimental procedure to address true intrinsic electrical properties at metal/semiconductor interfaces, and our findings have potential applications in next-generation 3D suspended ZnO NW-based nanoelectronic devices.

In-Situ Study of Surface Work Function, Electrical Characteristic and Field Emission Property of Individual Zno Nanowire

In Situ Characterization of the Local Work Function along Individual Free Standing Nanowire by Electrostatic Deflection

Pulsed-laser Treatment for Lowering Resistance and Enhancing Field Emission of Solution-Grown ZnO Nanowires

In-Situ Determination of the Flat Band Carrier Concentration and Surface Charge Density of Individual Semiconductor Nanowires by A Combination of Electrical and Field Emission Measurements

In-Situ Growth of ZnO Nano-Wire with Environmental Scanning Electron Microscope

In-situ Field Emission Studies of Individual One-Dimensional Nanostructures Based on Scanning Electron Microscope

Measuring the Electrical Characteristics of Individual Junctions in the SnO2 Capped ZnO Nanowire Arrays on Zn Substrate

In situ nanomechanical measurement of Cu nanowires

Growth And Characterization Of Cu-Catalyzed Zno Nanowires

Characterization of Electrical Properties of Suspended ZnO Nanowires Using a Nanorobotic Manipulation System Inside a Scanning Electron Microscope for Nanoelectronic Applications

Microphotoluminescence Study Of Individual Suspended Zno Nanowires

Probing the Surface Effect on Deep-Level Emissions of an Individual ZnO Nanowire Via Spatially Resolved Cathodoluminescence

Tuning the Electrical Properties of Zno-Si Nano-Contacts and Its Effect on Field Electron Emission from Zno Nanowires

Probe the Effects of Surface Adsorbates on Zno Nanowire Conductivity Using Dielectric Force Microscopy

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Mechanical/Electrical Characterization of ZnO Nanomaterial Based on AFM/Nanomanipulator Embedded in SEM

Field Emission Microscopy Study of Zinc Oxide Nanowires on Tungsten Tip

Dynamic fatigue studies of ZnO nanowires by in-situ transmission electron microscopy

Investigation of the Temperature Dependent Field Emission from Individual ZnO Nanowires for Evidence of Field-Induced Hot Electrons Emission

In situ TEM probing properties of individual one-dimensional nanostructures

In Situ Observation Of Zno Nanowire Growth On Zinc Film In Environmental Scanning Electron Microscope