Abstract:Electrical characterization of semiconducting oxide nanowires (NWs) is mostly performed using complex techniques, which necessitates a series of costly nanofabrication procedures. In this work, with the aim to provide a low-cost, feasible, facile, and reproducible approach for enabling the study of NW electrical properties, we report direct electrical measurements on individual and overlapped suspended zinc oxide NWs (ZnO NWs). We have succeeded in constructing both two- and three-terminal devices simply by employing tungsten (W) nanoprobes with the aid of a nanomanipulation system embedded inside a scanning electron microscope’s vacuum chamber. Stable contacts were established using the Joule heating effect and e-beam exposure at the junctions between the NW and the pre-cleaned W tips. P-channel field-effect transistor devices were achieved with an on–off current ratio of ∼101, a threshold voltage (>1.5 V), a transconductance of ∼16 μS, a sub-threshold swing of ∼220 mV/decade, and field-effect carrier mobility roughly estimated to be around 926.4 cm2/(V·s) after correction for contact resistances/optimization. The average resistivity of ZnO NWs was calculated to be ∼2.23 × 10–2 Ω·cm for NWs with diameters between 70 and 500 nm. Besides, we have demonstrated a contact resistance of ∼19.60 kΩ and a Schottky barrier height of ∼0.37 eV present at W/ZnO NW interfaces. The contact resistance between two overlapped ZnO NWs was estimated to be ∼283 kΩ, which is relatively higher than that offered between W/ZnO NWs. This work provides a solid experimental procedure to address true intrinsic electrical properties at metal/semiconductor interfaces, and our findings have potential applications in next-generation 3D suspended ZnO NW-based nanoelectronic devices.

In-Situ Determination of the Flat Band Carrier Concentration and Surface Charge Density of Individual Semiconductor Nanowires by A Combination of Electrical and Field Emission Measurements

Current-voltage Characteristics and Parameter Retrieval of Semiconducting Nanowires

In-Situ Study of Surface Work Function, Electrical Characteristic and Field Emission Property of Individual Zno Nanowire

Switching Electron Current In A Semiconductor Nanowire Via Controlling The Carrier Injection From The Electrode

Quantitative Analysis of Current-Voltage Characteristics of Semiconducting Nanowires: Decoupling of Contact Effects

In situ electrical measurements of polytypic silver nanowires.

Probe the Effects of Surface Adsorbates on Zno Nanowire Conductivity Using Dielectric Force Microscopy

In situ nanomechanical measurement of Cu nanowires

Characterization of Electrical Properties of Suspended ZnO Nanowires Using a Nanorobotic Manipulation System Inside a Scanning Electron Microscope for Nanoelectronic Applications

Measuring the Electrical Characteristics of Individual Junctions in the SnO2 Capped ZnO Nanowire Arrays on Zn Substrate

Observation of a 2D Electron Gas and the Tuning of the Electrical Conductance of ZnO Nanowires by Controllable Surface Band-Bending

Tuning the Electrical Properties of Zno-Si Nano-Contacts and Its Effect on Field Electron Emission from Zno Nanowires

In-situ Field Emission Studies of Individual One-Dimensional Nanostructures Based on Scanning Electron Microscope

In Situ Characterization of the Local Work Function along Individual Free Standing Nanowire by Electrostatic Deflection

Effect of surface states on electron transport in individual ZnO nanowires

Investigation of the Temperature Dependent Field Emission from Individual ZnO Nanowires for Evidence of Field-Induced Hot Electrons Emission

Ion Concentration-Dependent Surface Charge Density Inside a Nanopore

Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment

Penetration Length-Dependent Hot Electrons in the Field Emission from ZnO Nanowires

Simultaneous Electrical and Thermoelectric Parameter Retrieval Via Two Terminal Current–Voltage Measurements on Individual ZnO Nanowires

Probing the Surface Effect on Deep-Level Emissions of an Individual ZnO Nanowire Via Spatially Resolved Cathodoluminescence