In Situ Probing Electrical Response on Bending of ZnO Nanowires Inside Transmission Electron Microscope

K. H. Liu,P. Gao,Z. Xu,X. D. Bai,E. G. Wang
DOI: https://doi.org/10.1063/1.2936080
IF: 4
2008-01-01
Applied Physics Letters
Abstract:In situ electrical transport measurements on individual bent ZnO nanowires have been performed inside a high-resolution transmission electron microscope, where the crystal structures of ZnO nanowires were simultaneously imaged. A series of consecutively recorded current-voltage (I-V) curves along with an increase in nanowire bending show the striking effect of bending on their electrical behavior. The bending-induced changes of resistivity, electron concentration, and carrier mobility of ZnO nanowires have been retrieved based on the experimental I-V data, which suggests the applications of ZnO nanowires as nanoelectromechanical sensors.
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