Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Photoconducting Response on Bending of Individual ZnO Nanowires

Enhancing Sensitivity of A Single Zno Micro-/Nanowire Photodetector by Piezo-Phototronic Effect

Bending effects on lasing action of semiconductor nanowires.

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

In Situ Probing Electrical Response on Bending of ZnO Nanowires Inside Transmission Electron Microscope

Non-aligned ZnO Nanowires Composited with Reduced Graphene Oxide and Single-Walled Carbon Nanotubes for Highly Responsive UV–visible Photodetectors

Improvement of ultraviolet photoresponse of bent ZnO microwires by coupling piezoelectric and surface oxygen adsorption/desorption effects.

Bending-induced Conductance Increase in Individual Semiconductor Nanowires and Nanobelts

Electronic and Mechanical Coupling in Bent ZnO Nanowires

Growth and Bending-Sensitive Photoluminescence of A Flexible Pbtio3/Zno Nanocomposite

Strain Loading Mode Dependent Bandgap Deformation Potential in ZnO Micro-/Nanowires.

Analyzing the Mechanism of Zinc Oxide Nanowires Bending and Bundling Induced by Electron Beam under Scanning Electron Microscope Using Numerical and Simulation Analysis

Uniaxial tensile strain and exciton–phonon coupling in bent ZnO nanowires

Enhanced Photoresponse in Zno Nanowires Decorated with Cdte Quantum Dot

Temperature-Dependent Photoconductance of Heavily Doped ZnO Nanowires

Probing the Strain Effect on Near Band Edge Emission of a Curved ZnO Nanowire Via Spatially Resolved Cathodoluminescence

Asymmetrical quantum dot growth on tensile and compressive-strained ZnO nanowire surfaces

Localized suppression of longitudinal-optical-phonon–exciton coupling in bent ZnO nanowires

Defect-Related Photoresponse and Polarization-Sensitive Photodetection of Single ZnO Nanowires

High-performance UV photodetection of unique ZnO nanowires from zinc carbonate hydroxide nanobelts.