Abstract:Elastic strain has been an important method to regulate the electronic structures and physical properties of nanoscale semiconductors due to the promising potentials in improving the performance of their optoelectronic devices. Here, we report the investigation of bending strain effects on the optical and optoelectric properties of individual gallium nitride (GaN) nanowires (NWs). By charactering the near-band emission spectrum of individual GaN NWs at different bending strains with low temperature cathodoluminescence (CL), we reveal that the near-band emission splits into two peaks, where the low energy peak displays a linear redshift with increasing the bending strain while the high energy one shows a slight blueshift. Further localized ultraviolet (UV) photoresponse measurements illustrate that the photoresponse of the GaN NWs shows a linear increase with the bending train, and the maximum enhancement is more than two orders of magnitude. The experimental observations are well interpreted by theoretical calculations on the strain modulation on the electronic band structure of GaN combined with analysis of carrier dynamics and optical waveguide effect in the bending strain field. Our results not only shed light on the bending strain effects on the optical and optoelectric properties of semiconductors, but also hold potential to help the future design of high performance nano-optoelectric devices.

Bending effects on lasing action of semiconductor nanowires.

Lasing Characteristics of Curved Semiconductor Nanowires

Broadly Defining Lasing Wavelengths in Single Bandgap-Graded Semiconductor Nanowires.

Light Propagation in Curved Silver Nanowire Plasmonic Waveguides.

Modeling bending losses of optical nanofibers or nanowires.

Wavelength tunable CdSe nanowire lasers based on the absorption-emission-absorption process.

Single Mode Lasing in Coupled Nanowires

Waveguide Bends from Nanometric Silica Wires

Lasing of CdSe/SiO2 Nanocables Synthesized by the Facile Chemical Vapor Deposition Method.

Bending strain effects on the optical and optoelectric properties of GaN nanowires

Outermost Tensile Strain Dominated Exciton Emission in Bending CdSe Nanowires

Single-nanowire single-mode laser.

Tailoring the Lasing Modes in Semiconductor Nanowire Cavities Using Intrinsic Self-Absorption.

Optical Quenching Of Photoconductivity In Cdse Single Nanowires Via Waveguiding Excitation

Loss Reduction in Sharply Bent Optical Nanofibers by Coupling with Au Nanoparticles

Bending-induced Conductance Increase in Individual Semiconductor Nanowires and Nanobelts

Probing the Strain Effect on Near Band Edge Emission of a Curved ZnO Nanowire Via Spatially Resolved Cathodoluminescence

Realizing Single-Mode Lasing of Cadmium Selenide Nanoribbons with Strain Engineering

The Effects Of Curvature On The Thermal Conduction Of Bent Silicon Nanowire

Lateral Bending of Ag Nanowires Toward Controllable Manipulation.

Linear Strain-Gradient Effect on the Energy Bandgap in Bent Cds Nanowires