Abstract:Elastic strain has been an important method to regulate the electronic structures and physical properties of nanoscale semiconductors due to the promising potentials in improving the performance of their optoelectronic devices. Here, we report the investigation of bending strain effects on the optical and optoelectric properties of individual gallium nitride (GaN) nanowires (NWs). By charactering the near-band emission spectrum of individual GaN NWs at different bending strains with low temperature cathodoluminescence (CL), we reveal that the near-band emission splits into two peaks, where the low energy peak displays a linear redshift with increasing the bending strain while the high energy one shows a slight blueshift. Further localized ultraviolet (UV) photoresponse measurements illustrate that the photoresponse of the GaN NWs shows a linear increase with the bending train, and the maximum enhancement is more than two orders of magnitude. The experimental observations are well interpreted by theoretical calculations on the strain modulation on the electronic band structure of GaN combined with analysis of carrier dynamics and optical waveguide effect in the bending strain field. Our results not only shed light on the bending strain effects on the optical and optoelectric properties of semiconductors, but also hold potential to help the future design of high performance nano-optoelectric devices.

Lasing Characteristics of Curved Semiconductor Nanowires

Bending effects on lasing action of semiconductor nanowires.

Light Propagation in Curved Silver Nanowire Plasmonic Waveguides.

Broadly Defining Lasing Wavelengths in Single Bandgap-Graded Semiconductor Nanowires.

Single Mode Lasing in Coupled Nanowires

Wavelength tunable CdSe nanowire lasers based on the absorption-emission-absorption process.

Optically pumped semiconductor nanowire lasers

Lasing of CdSe/SiO2 Nanocables Synthesized by the Facile Chemical Vapor Deposition Method.

Modeling bending losses of optical nanofibers or nanowires.

Hybrid Photon-Plasmon Nanowire Lasers

Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Single-nanowire single-mode laser.

Fiber-Integrated Reversibly Wavelength-Tunable Nanowire Laser Based on Nanocavity Mode Coupling.

Pigtailed CdSe Nanoribbon Ring Laser

Semiconductor Nanowire Plasmonic Lasers

Tailoring the Lasing Modes in Semiconductor Nanowire Cavities Using Intrinsic Self-Absorption.

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Bending strain effects on the optical and optoelectric properties of GaN nanowires

Probing the Strain Effect on Near Band Edge Emission of a Curved ZnO Nanowire Via Spatially Resolved Cathodoluminescence

Single-Mode Semiconductor Nanowire Lasers With Coupled Cavities

The Effects Of Curvature On The Thermal Conduction Of Bent Silicon Nanowire