Optically pumped semiconductor nanowire lasers

Yaoguang Ma,Limin Tong

DOI: https://doi.org/10.1007/s12200-012-0277-7

2012-01-01

Frontiers of Optoelectronics

Abstract:This paper reviews our recent work on fabrication, optical characterization and lasing application of semiconductor nanowires, with brief introduction of related work from many other groups.

What problem does this paper attempt to address?

Manipulating Light with a Single Nanowire

Limin Tong

DOI: https://doi.org/10.1364/n3.2013.nsa4b.1

2013-01-01

Abstract:As typical one-dimensional nanostructures, photonic nanowires (e.g., semiconductor nanowires, glass nanowires, polymer nanowires and metallic nanowires) offer unique properties for manipulating light on nanoscale with tight optical confinement, strong near-field interaction, field enhancement and abnormal dispersion[1], which opens new opportunities for exploring light-matter interaction on the nanoscale, as well as for intriguing nanoscale photonic circuits and devices that is superior to their conventional counterparts. This talk introduces our recent work on the generation (e.g., nanowire light emission[2,3] and lasing[4,5]), wavelength conversion (e.g., second-harmonic and supercontinuum generation in single nanowires[6,7]), propagation (e.g., nanowire waveguides[8]), modulation (e.g., single nanowire ultrafast optical modulators[9]) and detection (e.g., single nanowire photodetector [10] and sensors [11,12]) of light with single nanowires.
Broadly Defining Lasing Wavelengths in Single Bandgap-Graded Semiconductor Nanowires.

Zongyin Yang,Delong Wang,Chao Meng,Zhemin Wu,Yong Wang,Yaoguang Ma,Lun Dai,Xiaowei Liu,Tawfique Hasan,Xu Liu,Qing Yang

DOI: https://doi.org/10.1021/nl500432m

IF: 10.8

2014-01-01

Nano Letters

Abstract:Designing lasing wavelengths and modes is essential to the practical applications of nanowire (NW) lasers. Here, according to the localized photoluminescence spectra, we first demonstrate the ability to define lasing wavelengths over a wide range (up to 119 nm) based on an individual bandgap-graded CdSSe NW by forward cutting the NW from CdSe to CdS end. Furthermore, free spectral range (FSR) and modes of the obtained lasers could be controlled by backward cutting the NW from CdS to CdSe end step-by-step. Interestingly, single-mode NW laser with predefined lasing wavelength is realized in short NWs because of the strong mode competition and increase in FSR. Finally, the gain properties of the bandgap-graded NWs are investigated. The combination of wavelength and mode selectivity in NW lasers may provide a new platform for the next generation of integrated optoelectronic devices.
Single Mode Lasing in Coupled Nanowires

Yao Xiao,Chao Meng,Xiaoqin Wu,Limin Tong

DOI: https://doi.org/10.1063/1.3610965

IF: 4

2011-01-01

Applied Physics Letters

Abstract:We demonstrate single mode lasing in coupled CdSe nanowires. By coupling two 420 nm diameter CdSe nanowires to form an X-structure cavity, single-mode lasing emission around 734.3 nm is obtained with line width of 0.11 nm and lasing threshold of about 120 μJ/cm2. Mode selection in the lasing nanowire is realized via Vernier effect in the coupled cavities. Our results suggest a simple approach to single-mode nanowire lasers.
Lasing Characteristics of Curved Semiconductor Nanowires

Weisong Yang,Yipei Wang,Yaoguang Ma,Chao Meng,Xiaoqin Wu,Qing Yang

DOI: https://doi.org/10.1007/s12200-013-0344-8

2013-01-01

Frontiers of Optoelectronics

Abstract:The characteristics of curved semiconductor nanowire (NW) lasers were investigated. The red-shift in the laser spectra with increasing bending angles can be observed much more clearly than that in the photoluminescence (PL) spectra. Due to oscillation of light in resonant cavity, the bending loss of laser exhibits multiple times amplification of that of PL. Furthermore, an abnormal phenomenon of dominant peak switching is found in curved NWs when increasing the pump power, which has been first discovered and reported.
Nanofibers and Nanowires Tutorial Talk

Tong, Limin

2011-01-01

Abstract:This paper discusses the following: nanowire fabrication; nanowire manipulation; optics in nanowires; and nanowire photonic components and devices.
Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Guanzhong Wang,Xiaoshun Jiang,Mingxiao Zhao,Yaoguang Ma,Huibo Fan,Qing Yang,Limin Tong,Min Xiao

DOI: https://doi.org/10.1364/OE.20.029472

IF: 3.8

2012-01-01

Optics Express

Abstract:We experimentally demonstrate a hybrid structure microlaser on chip with a single CdSe nanowire attached to a high-Q silica microdisk cavity at room temperature. When pumped by a 532 nm pulse laser, both single-longitudinal mode and multi-longitudinal mode lasers with linewidth of 0.18 nm are obtained from the hybrid structure with a 58-mu m-diameter microdisk and a 250-nm diameter nanowire. The measured lasing threshold of the microlaser is as low as 100 mu J/cm(2). (C) 2012 Optical Society of America
Nanowiring Light

Svacha, G.T.,Mazur, E.,Tong, Limin

DOI: https://doi.org/10.1109/ofc.2005.192893

2005-01-01

Abstract:Recent advances in the fabrication and manipulation of sub-wavelength optical fibers provide new methods for building chemical and biological sensors, generating supercontinuum light by nonlinear pulse propagation, and constructing microphotonic components and devices. We examine the properties of sub-wavelength dimension optical fibers as waveguides. The reported silica submicrometer- or nanometer-diameter wires are suitable for low-loss optical wave guiding. Thanks to their excellent uniformity, large length, high flexibility, and strength, these wires can be manipulated and assembled with high accuracy.
Transverse Sum-Frequency Generation In Single Semiconductor Nanowires

Huakang Yu,Wei Fang,Fuxing Gu,Weitao Liu,Aimin Wang,Xing Lin,Liying Chen,Limin Tong

DOI: https://doi.org/10.1364/cleo_qels.2013.qtu2b.5

2013-01-01

Abstract:Here we report efficient transverse sum-frequency generation in single semiconductor nanowires with low-power operation, which may serve as broadband tunable coherent light source for potential application in physics, chemistry, materials science and biology.
Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Salman Ullah,Minghua Zhuge,Liang Zhang,Xiang Fu,Yaoguang Ma,Qing Yang

DOI: https://doi.org/10.1088/1361-6528/ad28d4

IF: 3.5

2024-01-01

Nanotechnology

Abstract:As an idealized light source, semiconductor nanowire (NW) lasers have been extensively studied due to its potential applications in many fields such as optoelectronics, nanophononics, optical communication, signal processing, and displays. In this letter, we proposed a novel approach to realize a single-mode nanolaser by forming an Fabry-Perot whispering gallery mode (FP-WGM) hybrid nanocavity between two cross-contact CdS NWs, i.e. x and y-NW. In our method, x-NW supports the regular FP oscillation in the axis direction while the cross section of y-NW provides a ultrasmall WGM nanocavity with a higher Q-factor and mode election which confirms the specific single mode can be excited. Experimentally, single-mode lasing emission centered at 517 nm was obtained with full width at half maximum of 0.08 nm and lasing threshold of similar to 50 kW cm-2. The suggested designing skills projected a general strategy for lasing mode regulation and single-mode realization. The single-mode low-threshold lasing strategy in coupled NWs may open a new avenue for practical applications of NW lasers and further trigger other photonic devices at a visible range.
Compact hybrid laser based on semiconductor nanowires and a silica biconical fiber

Ding, Ye,Guo, Xin,Guanzhong Wang,Tong, Limin,Qing Yang

DOI: https://doi.org/10.1364/acp.2009.tud4

2009-01-01

Abstract:We demonstrate a hybrid laser consisting of zinc oxide (ZnO) nanowires attached to the waist of a silica biconical fiber, which is pumped by 355 nm wavelength laser pulses. The laser threshold is lower than 0.1 µJ/pulse. The full-width at half-maximum (FWHM) of the cavity mode is about 0.7 nm, indicating a quality factor of about 560. The design offers convenient, efficient and compact approach to both pumping and collection of the semiconductor nanowire lasers, which represents a significant step toward high-density integration of functional building blocks for an ultracompact nanophotonic circuit.
Single-nanowire single-mode laser.

Yao Xiao,Chao Meng,Pan Wang,Yu Ye,Huakang Yu,Shanshan Wang,Fuxing Gu,Lun Dai,Limin Tong

DOI: https://doi.org/10.1021/nl1040308

IF: 10.8

2011-01-01

Nano Letters

Abstract:We demonstrate single-mode laser emission in single nanowires. By folding a 200 nm diameter CdSe nanowire to form loop mirrors, single-mode laser emission around 738 nm wavelength is obtained with line width of 0.12 nm and low threshold. The mode selection is realized by the vernier effect of coupled cavities in the folded nanowire. In addition, the loop structure makes it possible to tune the nanowire cavity, opening an opportunity to realize a tunable single-mode nanowire laser.
Control,optimization and Measurement of Parameters of Semiconductor Nanowires Lasers

Xiaowei Liu,Pengfei Xu,Yuanpeng Wu,Zongyin Yang,Chao Meng,Weisong Yang,Jiabei Li,Delong Wang,Xu Liu,Qing Yang

DOI: https://doi.org/10.1016/j.nanoen.2014.11.044

IF: 17.6

2014-01-01

Nano Energy

Abstract:Semiconductor nanowire (SNW) lasers have great potential applications in high density data storage, single molecule detection, direct RNA and DNA sequencing and integrated optoelectronic circuits etc. While for their practical applications, control and optimization of the parameters are of great significance and have been attracting growing interests in the past years. Here we present a review of the key parameters control and optimization about SNW lasers. After introducing the background of NW lasers in the first two chapters, wavelength control, mode optimization, threshold reduction and polarization measurement and modulation will be demonstrated in the following text successively. Finally, we will give a perspective on SNW lasers research to address important future directions and challenges for further enrichment of this emerging area.
Research Progress On Semiconductor Micro/Nanowire Lasers

于果 Yu Guo,李俊超 Li Junchao,温培钧 Wen Peijun,胡晓东 Hu Xiaodong

DOI: https://doi.org/10.3788/CJL202047.0701011

2020-01-01

Abstract:Semiconductor micro/nanowire lasers can be used as integrated coherent light sources. Further, they can be extensively applied in various fields, including optical communication, optical computing, sensors, and biological studies. In this study, we review the domestic and international research progress on wavelength tuning and single-mode lasing of the semiconductor micro/nanowire lasers. Moreover, the Bose-Einstein condensation phenomenon of exciton-polariton based on the strong photon-exciton coupling effect is introduced as a new method to develop micro/nanowire lasers with low lasing thresholds. In addition, the operating mechanism of new lasers based on exciton-polariton and new achievements are presented.
Nanowire Waveguides and Lasers: Advances and Opportunities in Photonic Circuits

Zhiyuan Gu,Qinghai Song,Shumin Xiao

DOI: https://doi.org/10.3389/fchem.2020.613504

2021-01-08

Abstract:Due to their single-crystalline structures, comparatively large aspect ratios, tight optical confinement and smooth surfaces, nanowires have increasingly attracted research interests for both fundamental studies and technological applications in on-chip photonic devices. This class of nanostructures typically have cross-sections of 2~200 nm and lengths upwards of several micrometers, allowing for the bridging of the nanoscopic and macroscopic world. In particular, the lasing behaviors can be established from a nanowire resonator with positive feedback via end-facet reflection, making the nanowire a promising candidate in the next generation of optoelectronics. Consequently, versatile nanowire-based devices ranging from nanoscale coherent lasers, optical sensors, waveguides, optical switching, and photonic networks have been proposed and experimentally demonstrated in the past decade. In this article, significant progresses in the nanowire fabrication, lasers, circuits, and devices are reviewed. First, we focus on the achievements of nanowire synthesis and introduce the basics of nanowire optics. Following the cavity configurations and mode categories, then the different light sources consisting of nanowires are presented. Next, we review the recent progress and current status of functional nanowire devices. Finally, we offer our perspective of nanowires regarding their challenges and future opportunities in photonic circuits.
Hybrid Structure Laser Based on Semiconductor Nanowires and a Silica Microfiber Knot Cavity

Qing Yang,Xiaoshun Jiang,Xin Guo,Yuan Chen,Limin Tong

DOI: https://doi.org/10.1063/1.3093821

IF: 4

2009-01-01

Applied Physics Letters

Abstract:We demonstrate a hybrid structure laser consisting of a single or multiple zinc oxide (ZnO)nanowires attached to a silica microfiber knot cavity, which is pumped by 355 nm wavelength laser pulses. The laser threshold is lower than 0.2 μ J / pulse . The measured linewidth of the lasing mode is about 0.04 nm. The hybrid structure combines advantages of high gain of semiconductornanowires and high quality factor of microfiber knot cavities. Additionally, the design offers convenient and efficient approach to both pumping and collection of the semiconductornanowire lasers.
Semiconductor Nanowire Plasmonic Lasers

Chun Li,Zhen Liu,Jie Chen,Yan Gao,Meili Li,Qing Zhang

DOI: https://doi.org/10.1515/nanoph-2019-0206

IF: 7.5

2019-01-01

Nanophotonics

Abstract:Semiconductor nanowires (NW) hold great promise for micro/nanolasers owing to their naturally formed resonant microcavity, tightly confined electromagnetic field, and outstanding capability of integration with planar waveguide for on-chip optoelectronic applications. However, constrained by the optical diffraction limit, the dimension of semiconductor lasers cannot be smaller than half the optical wavelength in free space, typically several hundreds of nanometers. Semiconductor NW plasmonic lasers provide a solution to break this limitation and realize deep sub-wavelength light sources. In this review, we summarize the advances of semiconductor NW plasmonic lasers since their first demonstration in 2009. First of all, we briefly look into the fabrication and physical/chemical properties of semiconductor NWs. Next, we discuss the fundamentals of surface plasmons as well as the recent progress in semiconductor NW plasmonic lasers from the aspects of multicolor realization, threshold reduction, ultrafast modulation, and electrically driven operations, along with their applications in sensing and integrated optics. Finally, we provide insights into bright perspectives and remaining challenges.
Single-Mode Semiconductor Nanowire Lasers With Coupled Cavities

Salman Ullah,Sijie Pian,Fang Dai,Yilun Wang,Yaoguang Ma,Qing Yang

DOI: https://doi.org/10.3389/fchem.2020.631870

IF: 5.5

2021-01-15

Frontiers in Chemistry

Abstract:Semiconductor nanowires are one of the most fascinating topics over the past few decades. As miniaturized coherent light sources, semiconductor nanowires have been attracting tremendous attention in recent years for scientific and technological interest as potential ultra-compact, low cost, high efficiency, and low power consumption. Among different types of lasers, one-dimensional nanowires are of great interest as a promising material for next-generation nanophotonics and nanoelectronics applications due to their unique optical and electrical properties. Semiconductor nanowire lasers with single-mode output are vital in a variety of practical applications ranging from signal processing, spectroscopy, displays, optical sensing, on-chip communications, and biological studies. This article reviews the basic technology and research progress of single-mode semiconductor nanowire lasers. Afterward, the key methods and development of the different types of coupling to achieved single-mode laser output are elaborated. Finally, the challenges faced by each scheme are summarized.

chemistry, multidisciplinary
Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature

Hyunseok Kim,Wook-Jae Lee,Alan C. Farrell,Pradeep Senanayake,Diana L. Huffaker

DOI: https://doi.org/10.1021/acs.nanolett.7b00384

2017-01-11

Abstract:Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and the capability to grow directly on lattice-mismatched silicon substrates. Although there have been remarkable advances in nanowire-based emitters, their practical applications are still in the early stages due to the difficulties in integrating nanowire emitters with photonic integrated circuits (PICs). Here, we demonstrate for the first time optically pumped III-V nanowire array lasers monolithically integrated on silicon-on-insulator (SOI) platform. Selective-area growth of purely single-crystalline InGaAs/InGaP core/shell nanowires on an SOI substrate enables the nanowire array to form a photonic crystal nanobeam cavity with superior optical and structural properties, resulting in the laser to operate at room temperature. We also show that the nanowire array lasers are effectively coupled with SOI waveguides by employing nanoepitaxy on a pre-patterned SOI platform. These results represent a new platform for ultra-compact and energy-efficient optical links, and unambiguously point the way toward practical and functional nanowire lasers.

Mesoscale and Nanoscale Physics,Optics
Optical Property and Lasing of GaAs-based Nanowires

Southern University of Science and Technology,Chen Yuting,Wei Zhipeng,Chen Rui

DOI: https://doi.org/10.1007/s40843-020-1288-6

2020-01-01

Science China Materials

Abstract:GaAs-based nanowire (NW) lasers working in the infrared region is critical in integrated optoelectronics.In the past few decades,the field of NW lasers has developed rapidly.Compared with materials working in the ultraviolet and visible ranges,GaAs-based infrared NW lasers,however,are more difficult to achieve because of their specific properties.In this review,we focus on the recent developments of GaAs-based NWs,more especially,the optical property and lasing of GaAs-based NWs.The growth mechanism of GaAs NWs is introduced in detail,including the crystal phase control and the growth of complex structures.Subsequently,the influence and improvement of the optical properties of GaAsbased NWs are introduced and discussed.Finally,the design and latest progress of GaAs-based NW lasers are put forward.
Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays

Xutao Zhang,Fanlu Zhang,Ruixuan Yi,Naiyin Wang,Zhicheng Su,Mingwen Zhang,Bijun Zhao,Ziyuan Li,Jiangtao Qu,Julie M Cairney,Yuerui Lu,Jianlin Zhao,Xuetao Gan,Hark Hoe Tan,Chennupati Jagadish,Lan Fu

DOI: https://doi.org/10.1038/s41377-024-01570-7

2024-09-04

Abstract:Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies, which require compact, multiwavelength laser sources at the telecom band. Here, we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core-shell nanowire array epitaxially grown on InP substrate by selective area epitaxy. To reduce optical loss and tailor the cavity mode, a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality. Owing to the strong quantum confinement effect of InGaAs quantum wells and the successful formation of a vertical Fabry-Pérot cavity between the top nanowire facet and bottom nanowire/SiO2 mask interface, stimulated emissions of the EH11a/b mode from single vertical nanowires from an on-substrate nanowire array have been demonstrated with a lasing threshold of ~28.2 μJ cm-2 per pulse and a high characteristic temperature of ~128 K. By fine-tuning the In composition of the quantum wells, room temperature, single-mode lasing is achieved in the vertical direction across a broad near-infrared spectral range, spanning from 940 nm to the telecommunication O and C bands. Our research indicates that through a carefully designed facet engineering strategy, highly ordered, uniform nanowire arrays with precise dimension control can be achieved to simultaneously deliver thousands of nanolasers with multiple wavelengths on the same substrate, paving a promising and scalable pathway towards future advanced optoelectronic and photonic systems.

Optically pumped semiconductor nanowire lasers

Manipulating Light with a Single Nanowire

Broadly Defining Lasing Wavelengths in Single Bandgap-Graded Semiconductor Nanowires.

Single Mode Lasing in Coupled Nanowires

Lasing Characteristics of Curved Semiconductor Nanowires

Nanofibers and Nanowires Tutorial Talk

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Nanowiring Light

Transverse Sum-Frequency Generation In Single Semiconductor Nanowires

Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Compact hybrid laser based on semiconductor nanowires and a silica biconical fiber

Single-nanowire single-mode laser.

Control,optimization and Measurement of Parameters of Semiconductor Nanowires Lasers

Research Progress On Semiconductor Micro/Nanowire Lasers

Nanowire Waveguides and Lasers: Advances and Opportunities in Photonic Circuits

Hybrid Structure Laser Based on Semiconductor Nanowires and a Silica Microfiber Knot Cavity

Semiconductor Nanowire Plasmonic Lasers

Single-Mode Semiconductor Nanowire Lasers With Coupled Cavities

Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature

Optical Property and Lasing of GaAs-based Nanowires

Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays