Bending-induced Conductance Increase in Individual Semiconductor Nanowires and Nanobelts

Xiaobing Han,Guangyin Jing,Xinzheng Zhang,Renmin Ma,Xuefeng Song,Jun Xu,Zhimin Liao,Ning Wang,Dapeng Yu
DOI: https://doi.org/10.1007/s12274-009-9053-4
IF: 9.9
2009-01-01
Nano Research
Abstract:Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts. Significant conductance increases of up to 113% were observed on bending individual ZnO nanowires or CdS nanobelts. This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements, such as using different manipulating tips (silicon, glass or tungsten) to bend the nanowires or nanobelts, and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.
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