Abstract:Nanowire-based devices have been widely applied in optoelectronics, sensors, generators and spectroscopy. These nanowires are typically subjected to mechanical conditions during manufacture or operation. Thus, a compressive understanding of nanowire mechanical properties is increasingly required. However, only limited results have been reported owing to the challenges inherent in nanomechanical testing, particularly for quantitative tensile deformation. Herein, taper-free zinc blende GaAs nanowires with a 120 nm diameter are grown along the [111]B direction using metalorganic vapor phase epitaxy. The mechanical properties and fracture mechanisms of these single-phase GaAs nanowires are explored by in-situ uniaxial tensile deformation inside a transmission electron microscope, followed by molecular dynamics simulations. Under tensile stress, GaAs nanowires deform overally elastically until sudden brittle fracture at 3.79% strain. The fracture strength and elastic modulus are experimentally determined as 4.0 and 109.5 GPa, respectively, which are much smaller than other reported results based on compression. The tensile deformation and fracture mechanisms are further explored using molecular dynamics simulations, and the effects of different crystal structures on the GaAs nanowire mechanical behavior are discussed. These results assess the mechanical behavior of single GaAs nanowires and present critical insights into the reliable design of engineering nanodevices.

In situ study on transport property of bending GaAs nanowires in transmission electron microscope

In Situ Observation of High Bending Strain Recoverability in Au Nanowires

Bending-induced Deformation Twinning in Body-Centered Cubic Tungsten Nanowires

In situ nanomechanical measurement of Cu nanowires

In Situ Probing Electrical Response on Bending of ZnO Nanowires Inside Transmission Electron Microscope

Anelastic behavior in GaAs semiconductor nanowires.

Nanomechanical behavior of single taper-free GaAs nanowires unravelled by in-situ TEM mechanical testing and molecular dynamics simulation

Tuning hole mobility of individual p-doped GaAs nanowires by uniaxial tensile stress

Deformation of Copper Nanowire under Coupled Tension–Torsion Loading

Controlling charges distribution at the surface of a single GaN nanowire by in-situ strain

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Bending-induced Conductance Increase in Individual Semiconductor Nanowires and Nanobelts

Bending strain effects on the optical and optoelectric properties of GaN nanowires

Tunable Anelasticity in Amorphous Si Nanowires

Superior electron transport of ultra-thin SiC nanowires with one impending tensile monatomic chain

Remarkable Thermal Conductivity Reduction of Silicon Nanowires During the Bending Process.

In Situelectrical Characterization of Tapered InAs Nanowires in a Transmission Electron Microscope with Ohmic Contacts

Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations.

Direct Measure of Strain and Electronic Structure in Gaas/Gap Core-Shell Nanowires

Piezoresistive Effect of N-Type 〈111〉-Oriented Si Nanowires under Large Tension/compression