Abstract:Ga-doped ZnO nanowire has a wurtzite hexagonal structure and has been prepared in a horizontal tube furnace by thermal chemical vapor deposition method. In this work, we fabricate the Ga-doped ZnO nanowires without a metalized catalyst through the thermal evaporation of the Zn powers and Ga degrees C.Temperature is the metals at a low growth temperature of 550 d critical experimental parameter for the formation of Ga-dope the ZnO nanowires.This evaporation process can be attributed to Ga dopant In the lattice position of he ZnO nanowires. As shown In scanning electron microscopy (SEM), nanowires of different diameters are evenly arranged on the Si substrate and nucleated via a self-catalysed mechanism by depositing a layer of ZnO film as the crystallization plant before growing ZnO nanowires on the film. Self-catalyzed growth of Ga-doped ZnO nanowires are of diameters 35-150nm and lengths up to several ones of micrometers. High resolution Transmission electron microscope (HRTEM) those lattice image of Ga doped ZnO nanowires, wherein nanowires are seen a lattice of a=3.25 angstrom and c=5.19 angstrom. As determine by selected area diffraction (SAD), the growth direction of Ga-doped ZnO nanowires is [001] and the nanowire consists of single-crystailline ZnO crystals.The luminescence spectra of the Ga-doped ZnO nanowires exhibit a UV band at 374nm and a strong green band at 498nm. In addition, the Ga-doped ZnO nano,wires with different diameters have a larger green light/UV ratio due to the recombination of holes with the electrons occupying the singly ionized more O vacancies that are larger In number. By virue of the doping of Ga, we observe that Ga-doped ZnO nanowires becomes broader and shifts to a longer wave 498nm at a lower energy and a strong green emission as compared to the undoped one in the cathodoluminescence and photoluminescence spectra. The Ga-doped ZnO nanowires; have a greater field-enhancement factor than the undoped ZnO nanowies. The Ga-doped ZnO nanowires with a low turn on field (12V mu m(-1)) are apparently lower than the undoped ZnO nanowires. Our results demonstrate that Ga-doped ZnO nanowires can provide the possibility of application In optoelectric nanodevices.

Temperature-Dependent Photoconductance of Heavily Doped ZnO Nanowires

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Pulsed-laser Treatment for Lowering Resistance and Enhancing Field Emission of Solution-Grown ZnO Nanowires

Abnormal Temperature Dependence of Conductance of Single Cd-Doped Zno Nanowires

Temperature Dependence of Photoconductivity and Persistent Photoconductivity of Single ZnO Nanowires

Phosphorus Doped Zn(1-x)Mg(x)O Nanowire Arrays.

Temperature Dependence of the Piezotronic Effect in ZnO Nanowires.

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Characterization of Ga-doped ZnO Nanowires Grown by Thermal Chemical Vapor Deposition

Temperature-Dependent Photoluminescence of Nanostructured ZnO

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Charged States and Band-Gap Narrowing in Codoped ZnO Nanowires for Enhanced Photoelectrochemical Responses

Synthesis, Characterization and UV Photodetector Application of Sb-doped ZnO Nanowires

Photoluminescence in Heavily Doped Zno : N : in Films

Photoluminescence of Nominally Undoped Heavy N-Type ZnO Nanowires

Field Emission and Optical Properties of Ga-doped ZnO Nanowires Synthesized Via Thermal Evaporation

Tunable N‐type Conductivity and Transport Properties of Ga‐doped ZnO Nanowire Arrays

Raman and Photoluminescence Properties of Highly Cu Doped ZnO Nanowires Fabricated by Vapor-Liquid-solid Process

Optical and Electrical Properties of Ga-Doped ZnO Nanowire Arrays on Conducting Substrates