Abstract:Ga-doped ZnO nanowire has a wurtzite hexagonal structure and has been prepared in a horizontal tube furnace by thermal chemical vapor deposition method. In this work, we fabricate the Ga-doped ZnO nanowires without a metalized catalyst through the thermal evaporation of the Zn powers and Ga degrees C.Temperature is the metals at a low growth temperature of 550 d critical experimental parameter for the formation of Ga-dope the ZnO nanowires.This evaporation process can be attributed to Ga dopant In the lattice position of he ZnO nanowires. As shown In scanning electron microscopy (SEM), nanowires of different diameters are evenly arranged on the Si substrate and nucleated via a self-catalysed mechanism by depositing a layer of ZnO film as the crystallization plant before growing ZnO nanowires on the film. Self-catalyzed growth of Ga-doped ZnO nanowires are of diameters 35-150nm and lengths up to several ones of micrometers. High resolution Transmission electron microscope (HRTEM) those lattice image of Ga doped ZnO nanowires, wherein nanowires are seen a lattice of a=3.25 angstrom and c=5.19 angstrom. As determine by selected area diffraction (SAD), the growth direction of Ga-doped ZnO nanowires is [001] and the nanowire consists of single-crystailline ZnO crystals.The luminescence spectra of the Ga-doped ZnO nanowires exhibit a UV band at 374nm and a strong green band at 498nm. In addition, the Ga-doped ZnO nano,wires with different diameters have a larger green light/UV ratio due to the recombination of holes with the electrons occupying the singly ionized more O vacancies that are larger In number. By virue of the doping of Ga, we observe that Ga-doped ZnO nanowires becomes broader and shifts to a longer wave 498nm at a lower energy and a strong green emission as compared to the undoped one in the cathodoluminescence and photoluminescence spectra. The Ga-doped ZnO nanowires; have a greater field-enhancement factor than the undoped ZnO nanowies. The Ga-doped ZnO nanowires with a low turn on field (12V mu m(-1)) are apparently lower than the undoped ZnO nanowires. Our results demonstrate that Ga-doped ZnO nanowires can provide the possibility of application In optoelectric nanodevices.

Characterization of Ga-doped ZnO Nanowires Grown by Thermal Chemical Vapor Deposition

Field Emission and Optical Properties of Ga-doped ZnO Nanowires Synthesized Via Thermal Evaporation

Optical and Electrical Properties of Ga-Doped ZnO Nanowire Arrays on Conducting Substrates

Growth And Characterization Of Cu-Catalyzed Zno Nanowires

Photoluminescence of Ga-doped ZnO Nanorods Prepared by Chemical Vapor Deposition

Fabrication and Characterization of Β-Ga2o3 Optical Nanowires

Phosphorus Doped Zn1-xMgxO Nanowire Arrays

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Microstructure, Optical and Photoluminescence Properties of Ga-doped ZnO Films Prepared by Pulsed Laser Deposition

Gallium Doping Dependence of Single-Crystal N-Type Zno Grown by Metal Organic Chemical Vapor Deposition

Preparation and Cathodoluminescence Properties of Ga-Doped ZnS Nanowalls

Tunable N‐type Conductivity and Transport Properties of Ga‐doped ZnO Nanowire Arrays

Temperature-Dependent Photoconductance of Heavily Doped ZnO Nanowires

Suppression of Visible Light Emission of Zno Nanostructures by Ga-Doping

Catalyst-free Synthesis of Well-Aligned ZnO Nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N Substrates.

Structural and Electrical Properties of Single Crystalline Ga-Doped Zno Thin Films Grown by Molecular Beam Epitaxy

Zn-dopant dependent defect evolution in GaN nanowires

Characterization of zinc oxide crystal nanowires grown by thermal evaporation of ZnS powders

Ga-Doped ZnS Nanowires as Precursors for ZnO/ZnGa2O4 Nanotubes

Synthesis and Characterization of ZnO Nanowires Using a Simple PVD Approach Without Catalysts