Abstract:The authors report fabrication of aluminum monodoped ZnO (AlZnO) and aluminum-indium dual-doped ZnO (AlInZnO) nanorods arrays. Optical properties of AlZnO and AlInZnO nanorods are studied through temperature-dependent photoluminescence (PL) and PL excitation (PLE). Compared to AlInZnO nanorods, AlZnO nanorods possess better PL properties, as evidenced by a higher ratio of intensity of band-edge emission to green emission at 10 K and a higher PL intensity at room temperature. As supported by x-ray diffraction patterns, AlZnO nanorods also have higher crystallinity than AlInZnO nanorods. Indium doping induces a pronounced donor-acceptor pair transition of ∼3.22 eV at 10 K, the mechanism of which is discussed. Temperature-dependent energies of the A free exciton (FXA) and neutral donor bound exciton (D0X) are analyzed and the Einstein temperature is deduced to be ∼310 K. An activation energy of ∼8 meV is determined from the quenching of D0X as a function of temperature in AlInZnO nanorods. It is interpreted that nonradiative centers caused by indium segregation result in the small activation energy. Moreover, temperature-dependent PLE of AlZnO and AlInZnO nanorods reveals that the donor levels of aluminum and indium are 75 and 102 meV, respectively. Considering that the donor level of Al is shallower than that of In and that the optical and crystal properties of AlZnO nanorods are better than those of AlInZnO nanorods, aluminum is a better n-type dopant than indium for ZnO nanorods.

Photoluminescence in Heavily Doped Zno : N : in Films

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Annealing-Induced Change of Hydrogen Behavior in Zno Nanorods Revealed by Photoluminescence

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Temperature-Dependent Photoluminescence of Zno Films Codoped with Tellurium and Nitrogen

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Comparative photoluminescence study on p-type and n-type ZnO films codoped by nitrogen and aluminium

Temperature-Dependent Photoconductance of Heavily Doped ZnO Nanowires

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Photoluminescence of Zno and Mn-Doped Zno Polycrystalline Films Prepared by Plasma Enhanced Chemical Vapour Deposition

Electrophotoluminescence of Sol-Gel Derived Zno Film: Effect of Electric Field on Near-Band-Edge Photoluminescence

Electrophotoluminescence of Zno Film

Carrier Type- and Concentration-Dependent Absorption and Photoluminescence of ZnO Films Doped with Different Na Contents

Temperature-Dependent Photoluminescence and Photoluminescence Excitation of Aluminum Monodoped and Aluminum-Indium Dual-Doped Zno Nanorods

Multiphonon Resonant Raman Scattering in N‐doped ZnO

Carrier localization in codoped ZnO:N:Al films

Optical properties of p-type ZnO doped by lithium and nitrogen

Photoluminescence of Zno : Tb Nanoparticles

Temperature-Dependent Photoluminescence of Nanostructured ZnO

Temperature-Dependent Photoluminescence of Quasialigned Al-Doped Zno Nanorods