Abstract:The authors report fabrication of aluminum monodoped ZnO (AlZnO) and aluminum-indium dual-doped ZnO (AlInZnO) nanorods arrays. Optical properties of AlZnO and AlInZnO nanorods are studied through temperature-dependent photoluminescence (PL) and PL excitation (PLE). Compared to AlInZnO nanorods, AlZnO nanorods possess better PL properties, as evidenced by a higher ratio of intensity of band-edge emission to green emission at 10 K and a higher PL intensity at room temperature. As supported by x-ray diffraction patterns, AlZnO nanorods also have higher crystallinity than AlInZnO nanorods. Indium doping induces a pronounced donor-acceptor pair transition of ∼3.22 eV at 10 K, the mechanism of which is discussed. Temperature-dependent energies of the A free exciton (FXA) and neutral donor bound exciton (D0X) are analyzed and the Einstein temperature is deduced to be ∼310 K. An activation energy of ∼8 meV is determined from the quenching of D0X as a function of temperature in AlInZnO nanorods. It is interpreted that nonradiative centers caused by indium segregation result in the small activation energy. Moreover, temperature-dependent PLE of AlZnO and AlInZnO nanorods reveals that the donor levels of aluminum and indium are 75 and 102 meV, respectively. Considering that the donor level of Al is shallower than that of In and that the optical and crystal properties of AlZnO nanorods are better than those of AlInZnO nanorods, aluminum is a better n-type dopant than indium for ZnO nanorods.

Comparative photoluminescence study on p-type and n-type ZnO films codoped by nitrogen and aluminium

Carrier localization in codoped ZnO:N:Al films

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Photoluminescence in Heavily Doped Zno : N : in Films

Temperature-Dependent Photoluminescence of Zno Films Codoped with Tellurium and Nitrogen

Temperature-Dependent Photoluminescence of Quasialigned Al-Doped Zno Nanorods

Temperature-Dependent Photoluminescence and Photoluminescence Excitation of Aluminum Monodoped and Aluminum-Indium Dual-Doped Zno Nanorods

Optical properties of p-type ZnO doped by lithium and nitrogen

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films

X-ray Photoelectron Spectroscopy Study of Al- and N- Co-Doped P-Type ZnO Thin Films

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

p-Type conduction in Al–N co-doped ZnO films

Al concentration dependence of electrical and photoluminescent properties of co-doped ZnO films

Photoluminescence Study of Sb-doped P-Type ZnO Films by Molecular-Beam Epitaxy

Carrier Type- and Concentration-Dependent Absorption and Photoluminescence of ZnO Films Doped with Different Na Contents

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

Correlation between defect-related photoluminescence emission and anomalous Raman peaks in N-Al co-doped ZnO thin films

Defect-Related Vibrational and Photoluminescence Spectroscopy of A Codoped Zno : Al : N Film