Abstract:Al-doped ZnO films were grown by reactive electron beam evaporation with ceramic targets,(ZnO)_(1-x)(Al_2O_3)_x(x=w(Al_2O_3)=0, 0.01,0.02,0.05),as source materials.The structural and electrical properties of Al-doped ZnO films were characterized by X-ray diffraction,Raman scattering and Hall investigations.The results showed that Al-doped ZnO films grown from(ZnO)_(1-x)(Al_2O_3)_x(x≤0.02) targets were still highly c-axis oriented,although the degree of c-axis orientation was somewhat degenerated along with further increase of Al content in the films.Raman scattering measurements indicated that the internal stress in Al-doped ZnO films increased along with the increase of Al content in the films and reached saturation in the case of x = 0.02.The actual atomic Al content in the films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was 6%,which was normalized with the Zn content in the film.The resistivity of Al-doped ZnO films first decreased with the increase of Al content in the film and reached a minimum of 7.85×10~(-4) Ω·cm at x=(0.02,) then increased with further increase of Al content in the film.The nature of the minimum resistivity of Al-doped ZnO films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was ascribed to the high electron density(1.32×10~(21) cm~(-3)) as well as its high electron mobility of 6.02 cm~2/(V·s).

X-ray Photoelectron Spectroscopy Study of Al- and N- Co-Doped P-Type ZnO Thin Films

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

p-Type conduction in Al–N co-doped ZnO films

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

Effect of Oxygen Partial Pressure Ratios on the Properties of Al–N Co-Doped ZnO Thin Films

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

N and Al co-doping as a way to p-type ZnO without post-growth annealing

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

Comparison of Valence Band X-Ray Photoelectron Spectrum Between Al–N-codoped and N-doped ZnO Films

Spectroscopic Studies of the Plasma for the Preparation of Al-N Co-Doped ZnO Films

Effects of Growth Ambient on Electrical Properties of Al–N Co-Doped P-Type ZnO Films

Effect of Substrate Temperature on Structural, Electrical and Optical Properties of Al-N Co-Doped Zno Thin Films

Aluminium Doping Induced Enhancement of P–d Coupling in ZnO

Comparative photoluminescence study on p-type and n-type ZnO films codoped by nitrogen and aluminium

Effects of Al Content on Properties of Al–N Codoped ZnO Films

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Electrical Properties of Al+N Co-doped p-type ZnO Films