Abstract:We have fabricated indium-doped ZnO (IZO) nanowires (NWs) and carried out 4-probe electrical-transport measurements at low temperatures. The NWs reveal charge conduction behavior characteristic of disordered metals. In addition to the $T$ dependence of resistance $R$, we have measured the magnetoresistances (MR) in perpendicular and parallel magnetic fields. Our $R(T)$ and MR data in different $T$ intervals are consistent with the theoretical predictions of the one- (1D), two- (2D) or three-dimensional (3D) weak-localization (WL) and the electron-electron interaction (EEI) effects. In particular, a few dimensionality crossovers in the two effects are observed. These crossover phenomena are consistent with the model of a "core-shell-like structure" in individual IZO NWs, where an outer shell of a thickness $t$ ($\simeq$ 15-17 nm) is responsible for the quantum-interference transport. In the WL effect, as the electron dephasing length $L_\phi$ gradually decreases with increasing $T$ from the lowest measurement temperatures, a 1D-to-2D dimensionality crossover takes place around a characteristic temperature where $L_\phi$ approximately equals $d$, an effective NW diameter which is slightly smaller than the geometric diameter. As $T$ further increases, a 2D-to-3D dimensionality crossover occurs around another characteristic temperature where $L_\phi$ approximately equals $t$ ($< d$). In the EEI effect, a 2D-to-3D dimensionality crossover takes place when the thermal diffusion length $L_T$ progressively decreases with increasing $T$ and approaches $t$. However, a crossover to the 1D EEI effect is not seen because $L_T < d$ even at $T$ = 1 K in our IZO NWs. Furthermore, we explain the various inelastic electron scattering processes which govern $L_\phi$. This work indicates that the surface-related conduction processes are essential to doped semiconductor nanostructures.

Manipulating the Quantum Interference Effect and Magnetotransport of ZnO Nanowires Through Interfacial Doping.

Pulsed-laser Treatment for Lowering Resistance and Enhancing Field Emission of Solution-Grown ZnO Nanowires

Interfacially Al-doped ZnO Nanowires: Greatly Enhanced Near Band Edge Emission Through Suppressed Electron-Phonon Coupling and Confined Optical Field.

Quantum-interference transport through surface layers of indium-doped ZnO nanowires

Conductivity Enhancement by Slight Indium Doping in ZnO Nanowires for Optoelectronic Applications

Preparation of One-Dimensional Diluted Magnetic Semiconducting Cr0.046zn0.954o and Properties Tuning with H-2 Atmospheric Annealing

Maximizing Integrated Optical and Electrical Properties of A Single Zno Nanowire Through Native Interfacial Doping

Lattice Dynamics of Twisted ZnO Nanowires under Generalized Born–von Karman Boundary Conditions

Synthesis and Stress Relaxation of Zno/Al-Doped Zno Core-Shell Nanowires

Enhanced Photoluminescence and Field-Emission Behavior of Vertically Well Aligned Arrays of In-Doped Zno Nanowires

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors.

Tuning the Electrical Properties of Zno-Si Nano-Contacts and Its Effect on Field Electron Emission from Zno Nanowires

Enhanced Optoelectronic Performance From The Ti-Doped Zno Nanowires

Effects of electron doping on the d0 magnetism in N-implanted ZnO and ZnAlO films

Characterization of Electrical Properties of Suspended ZnO Nanowires Using a Nanorobotic Manipulation System Inside a Scanning Electron Microscope for Nanoelectronic Applications

Liquid crystalline order and magnetocrystalline anisotropy in magnetically doped semiconducting ZnO nanowires

Observation of a 2D Electron Gas and the Tuning of the Electrical Conductance of ZnO Nanowires by Controllable Surface Band-Bending

Spatial Confinement Tuning of Quenched Disorder Effects and Enhanced Magnetoresistance in Manganite Nanowires

N-Doped Zno Thin Films and Nanowires: Energetics, Impurity Distribution and Magnetism

Optical and Electrical Properties of Ga-Doped ZnO Nanowire Arrays on Conducting Substrates

Weak localization and electron-electron interactions in Indium-doped ZnO nanowires