Abstract:We have fabricated indium-doped ZnO (IZO) nanowires (NWs) and carried out 4-probe electrical-transport measurements at low temperatures. The NWs reveal charge conduction behavior characteristic of disordered metals. In addition to the $T$ dependence of resistance $R$, we have measured the magnetoresistances (MR) in perpendicular and parallel magnetic fields. Our $R(T)$ and MR data in different $T$ intervals are consistent with the theoretical predictions of the one- (1D), two- (2D) or three-dimensional (3D) weak-localization (WL) and the electron-electron interaction (EEI) effects. In particular, a few dimensionality crossovers in the two effects are observed. These crossover phenomena are consistent with the model of a "core-shell-like structure" in individual IZO NWs, where an outer shell of a thickness $t$ ($\simeq$ 15-17 nm) is responsible for the quantum-interference transport. In the WL effect, as the electron dephasing length $L_\phi$ gradually decreases with increasing $T$ from the lowest measurement temperatures, a 1D-to-2D dimensionality crossover takes place around a characteristic temperature where $L_\phi$ approximately equals $d$, an effective NW diameter which is slightly smaller than the geometric diameter. As $T$ further increases, a 2D-to-3D dimensionality crossover occurs around another characteristic temperature where $L_\phi$ approximately equals $t$ ($< d$). In the EEI effect, a 2D-to-3D dimensionality crossover takes place when the thermal diffusion length $L_T$ progressively decreases with increasing $T$ and approaches $t$. However, a crossover to the 1D EEI effect is not seen because $L_T < d$ even at $T$ = 1 K in our IZO NWs. Furthermore, we explain the various inelastic electron scattering processes which govern $L_\phi$. This work indicates that the surface-related conduction processes are essential to doped semiconductor nanostructures.

Weak localization and electron-electron interactions in Indium-doped ZnO nanowires

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Conductivity Enhancement by Slight Indium Doping in ZnO Nanowires for Optoelectronic Applications

Quantum-interference transport through surface layers of indium-doped ZnO nanowires

Preparation of One-Dimensional Diluted Magnetic Semiconducting Cr0.046zn0.954o and Properties Tuning with H-2 Atmospheric Annealing

Strain Gradient Induced Spatially Indirect Excitons in Single Crystalline ZnO Nanowires

Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires

Manipulating the Quantum Interference Effect and Magnetotransport of ZnO Nanowires Through Interfacial Doping.

Lattice Dynamics of Twisted ZnO Nanowires under Generalized Born–von Karman Boundary Conditions

Temperature-Dependent Photoconductance of Heavily Doped ZnO Nanowires

Effects of Indium Doping on the Crystallographic, Morphological, Electrical, and Optical Properties of Highly Crystalline ZnO Films

Field Emission Properties of Indium-Doped ZnO Nanowires Prepared on ITO Glass Substrate

Tunable surface plasmon resonance and enhanced electrical conductivity of In doped ZnO colloidal nanocrystals

Degenerate Doping Induced Metallic Behaviors in Zno Nanobelts

Weak Localization in Indium Nitride Films

Raman Property of in Doped ZnO Superlattice Nanoribbons

Coulomb Oscillations Of Indium-Doped Zno Nanowire Transistors In A Magnetic Field

Coherent Spin Preparation of Indium Donor Qubits in Single ZnO Nanowires

Observation of a 2D Electron Gas and the Tuning of the Electrical Conductance of ZnO Nanowires by Controllable Surface Band-Bending

Role of indium doping on structural and electrical properties of ZnO nanoparticles prepared by sol–gel method

Ultraviolet Electroluminescence from In Doped n-ZnO Single-Nanowire/p~+-Si Heterostructures