Abstract:We have fabricated indium-doped ZnO (IZO) nanowires (NWs) and carried out 4-probe electrical-transport measurements at low temperatures. The NWs reveal charge conduction behavior characteristic of disordered metals. In addition to the $T$ dependence of resistance $R$, we have measured the magnetoresistances (MR) in perpendicular and parallel magnetic fields. Our $R(T)$ and MR data in different $T$ intervals are consistent with the theoretical predictions of the one- (1D), two- (2D) or three-dimensional (3D) weak-localization (WL) and the electron-electron interaction (EEI) effects. In particular, a few dimensionality crossovers in the two effects are observed. These crossover phenomena are consistent with the model of a "core-shell-like structure" in individual IZO NWs, where an outer shell of a thickness $t$ ($\simeq$ 15-17 nm) is responsible for the quantum-interference transport. In the WL effect, as the electron dephasing length $L_\phi$ gradually decreases with increasing $T$ from the lowest measurement temperatures, a 1D-to-2D dimensionality crossover takes place around a characteristic temperature where $L_\phi$ approximately equals $d$, an effective NW diameter which is slightly smaller than the geometric diameter. As $T$ further increases, a 2D-to-3D dimensionality crossover occurs around another characteristic temperature where $L_\phi$ approximately equals $t$ ($< d$). In the EEI effect, a 2D-to-3D dimensionality crossover takes place when the thermal diffusion length $L_T$ progressively decreases with increasing $T$ and approaches $t$. However, a crossover to the 1D EEI effect is not seen because $L_T < d$ even at $T$ = 1 K in our IZO NWs. Furthermore, we explain the various inelastic electron scattering processes which govern $L_\phi$. This work indicates that the surface-related conduction processes are essential to doped semiconductor nanostructures.

Coulomb Oscillations Of Indium-Doped Zno Nanowire Transistors In A Magnetic Field

Coulomb Oscillations Effect in Dual Gate Controlled Silicon Nanowire

Observation and Control of the Anomalous Aharonov-Bohm Oscillation in Enhanced-Mode Topological Insulator Nanowire Field-Effect Transistors

Spin-orbit Coupling and Electric-Dipole Spin Resonance in a Nanowire Double Quantum Dot

Observation of Coulomb Oscillations with Single Dot Characteristics in Heavy Doped Ultra Thin SOI Nanowires

Nanowire Acting as a Superconducting Quantum Interference Device

Andreev Tunneling Enhanced by Coulomb Oscillations in Superconductor-Semiconductor Hybrid Ge/Si Nanowire Devices

Quantum oscillations of the magnetic torque in the nodal-line Dirac semimetal ZrSiS

Ultralow-frequency Photocurrent Oscillation in ZnO Nanowires

Anomalous Zero-Bias Conductance Peak in A Nb-Insb Nanowire-Nb Hybrid Device

Quantum Interference in Carbon Nanotube Electron Resonators Induced by an Axial Magnetic Field

Aharonov-Bohm Oscillations in a Quasi-Ballistic 3D Topological Insulator Nanowire

Inverse-current quantum electro-oscillations in a charge-density wave insulator

Zero-bias conductance peaks at zero applied magnetic field due to stray fields from integrated micromagnets in hybrid nanowire quantum dots

Quantum Interference Effects in Topological Nanowires In a Longitudinal Magnetic Field

Conductance Quantization at Zero Magnetic Field in Insb Nanowires

Anomalous negative magnetoresistance in quantum-dot Josephson junctions with Kondo correlations

Manipulating the Quantum Interference Effect and Magnetotransport of ZnO Nanowires Through Interfacial Doping.

Quantum-interference transport through surface layers of indium-doped ZnO nanowires

Coulomb blockade in open superconducting islands on InAs nanowires

Gate-tuned Aharonov-Bohm Interference of Surface States in a Quasi-Ballistic Dirac Semimetal Nanowire