Field Emission Properties of Indium-Doped ZnO Nanowires Prepared on ITO Glass Substrate

Yangyang Zhao,Guofu Zhang,Runze Zhan,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen
DOI: https://doi.org/10.1109/ivnc.2018.8520049
2018-01-01
Abstract:Doping is an important approach for improving the field emission properties of semiconductor nanowire field emitters. The indium-doped zinc oxide nanowires were prepared on ITO glass substrate by thermal oxidation method and field emission properties were measured. The prepared In-doped nanowire arrays shows excellent field emission performance with a turn-on field of 4.0 V/μm and current fluctuation of ~1.4%.
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