Fabrication and Field Emission Properties of ZnO Nanorod Arrays with Different Orientation Degrees
P. J. Cao,S. Han,X. Wang,X. K. Liu,W. J. Liu,F. Jia,Y. X. Zeng,D. L. Zhu,Y. M. Lu
DOI: https://doi.org/10.1166/nnl.2017.2326
2017-01-01
Nanoscience and Nanotechnology Letters
Abstract:ZnO seed layers were deposited on silicon substrates by the pulsed laser deposition (PLD) method. ZnO nanorod arrays with different orientation degrees were grown using the chemical vapor deposition (CVD) method, and their field emission (FE) properties were studied. The ZnO seed layer with a thickness of approximately 450 nm exhibits a high c-axis orientation and possesses few defects. ZnO nanorods with similar lengths of approximately 22 mu m grow along the [0001] direction and contain a large number of oxygen vacancy defects. ZnO nanorods with a high orientation have the varying diameters from 160 to 230 nm and the areal density of approximately 2.6 x 10(8)/cm(2), while those with random orientation have a uniform diameter of approximately 130 nm and the areal density of approximately 5 x 10(7)/cm(2). The turn-on electrical field for the ZnO nanorod array with high orientation was 9.2 V/mu m, and the field enhancement factor was 1225, while that for the ZnO nanorod array with random orientation was 7.1 V/mu m, and the field enhancement factor was 1406. The better FE brightness distribution uniformity and the FE current density stability were obtained. The effect factors on the FE property have been discussed.